CA1018641A - Method of manufacturing a gallium phosphide red-emitting device - Google Patents

Method of manufacturing a gallium phosphide red-emitting device

Info

Publication number
CA1018641A
CA1018641A CA192,027A CA192027A CA1018641A CA 1018641 A CA1018641 A CA 1018641A CA 192027 A CA192027 A CA 192027A CA 1018641 A CA1018641 A CA 1018641A
Authority
CA
Canada
Prior art keywords
manufacturing
emitting device
gallium phosphide
red
phosphide red
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA192,027A
Other languages
English (en)
Other versions
CA192027S (en
Inventor
Makoto Naito
Akinobu Kasami
Masaru Kawachi
Tetsuo Sadamasa
Hiroki Mineo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2068773A external-priority patent/JPS531111B2/ja
Priority claimed from JP2068873A external-priority patent/JPS531112B2/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of CA1018641A publication Critical patent/CA1018641A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA192,027A 1973-02-22 1974-02-07 Method of manufacturing a gallium phosphide red-emitting device Expired CA1018641A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2068773A JPS531111B2 (de) 1973-02-22 1973-02-22
JP2068873A JPS531112B2 (de) 1973-02-22 1973-02-22

Publications (1)

Publication Number Publication Date
CA1018641A true CA1018641A (en) 1977-10-04

Family

ID=26357659

Family Applications (1)

Application Number Title Priority Date Filing Date
CA192,027A Expired CA1018641A (en) 1973-02-22 1974-02-07 Method of manufacturing a gallium phosphide red-emitting device

Country Status (6)

Country Link
US (1) US3951699A (de)
CA (1) CA1018641A (de)
DE (1) DE2408691A1 (de)
FR (1) FR2219525B1 (de)
GB (1) GB1416005A (de)
IT (1) IT1008261B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180423A (en) * 1974-01-31 1979-12-25 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing red light-emitting gallium phosphide device
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase
JPS6013317B2 (ja) * 1979-03-19 1985-04-06 松下電器産業株式会社 発光ダイオ−ドの製造方法
EP0115204B1 (de) * 1982-12-27 1989-03-29 Mitsubishi Kasei Polytec Company Epitaxiale Schicht angewendet für die Herstellung einer elektrolumineszierenden Infrarot-Diode
US4714687A (en) * 1986-10-27 1987-12-22 Corning Glass Works Glass-ceramics suitable for dielectric substrates
US5851850A (en) * 1992-07-31 1998-12-22 Shin-Etsu Handotai Co., Ltd. Method for fabricating a gap type semiconductor substrate of red light emitting devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3540941A (en) * 1967-12-01 1970-11-17 Ibm Method of heat treating semiconductor electroluminescent devices
US3584267A (en) * 1969-04-15 1971-06-08 Bell Telephone Labor Inc Gallium phosphide electroluminescent junction device
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
US3752713A (en) * 1970-02-14 1973-08-14 Oki Electric Ind Co Ltd Method of manufacturing semiconductor elements by liquid phase epitaxial growing method
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
US3806774A (en) * 1972-07-10 1974-04-23 Bell Telephone Labor Inc Bistable light emitting devices

Also Published As

Publication number Publication date
FR2219525B1 (de) 1978-06-02
GB1416005A (en) 1975-12-03
IT1008261B (it) 1976-11-10
US3951699A (en) 1976-04-20
DE2408691A1 (de) 1974-09-05
FR2219525A1 (de) 1974-09-20

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19941004