CA1013480A - Deep diode varactor - Google Patents
Deep diode varactorInfo
- Publication number
- CA1013480A CA1013480A CA212,473A CA212473A CA1013480A CA 1013480 A CA1013480 A CA 1013480A CA 212473 A CA212473 A CA 212473A CA 1013480 A CA1013480 A CA 1013480A
- Authority
- CA
- Canada
- Prior art keywords
- diode varactor
- deep diode
- deep
- varactor
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41114973A | 1973-10-30 | 1973-10-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1013480A true CA1013480A (en) | 1977-07-05 |
Family
ID=23627775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA212,473A Expired CA1013480A (en) | 1973-10-30 | 1974-10-29 | Deep diode varactor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5080782A (en) |
CA (1) | CA1013480A (en) |
DE (1) | DE2450935A1 (en) |
FR (1) | FR2249447B1 (en) |
GB (1) | GB1493828A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2441924A1 (en) * | 1978-11-15 | 1980-06-13 | Labo Electronique Physique | Variable capacity semiconductor and frequency multiplier circuit - is grown as series of diodes spaced by N-type layers and uses gallium:arsenide as implantation substance |
US5689031A (en) | 1995-10-17 | 1997-11-18 | Exxon Research & Engineering Company | Synthetic diesel fuel and process for its production |
-
1974
- 1974-10-25 DE DE19742450935 patent/DE2450935A1/en active Pending
- 1974-10-28 GB GB4655274A patent/GB1493828A/en not_active Expired
- 1974-10-29 CA CA212,473A patent/CA1013480A/en not_active Expired
- 1974-10-30 FR FR7436244A patent/FR2249447B1/fr not_active Expired
- 1974-10-30 JP JP12450074A patent/JPS5080782A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2249447A1 (en) | 1975-05-23 |
JPS5080782A (en) | 1975-07-01 |
FR2249447B1 (en) | 1978-09-29 |
GB1493828A (en) | 1977-11-30 |
DE2450935A1 (en) | 1975-05-07 |
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