CA1013480A - Deep diode varactor - Google Patents

Deep diode varactor

Info

Publication number
CA1013480A
CA1013480A CA212,473A CA212473A CA1013480A CA 1013480 A CA1013480 A CA 1013480A CA 212473 A CA212473 A CA 212473A CA 1013480 A CA1013480 A CA 1013480A
Authority
CA
Canada
Prior art keywords
diode varactor
deep diode
deep
varactor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA212,473A
Other versions
CA212473S (en
Inventor
Thomas R. Anthony
Harvey E. Cline
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of CA1013480A publication Critical patent/CA1013480A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors with potential-jump barrier or surface barrier
    • H01L29/93Variable capacitance diodes, e.g. varactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CA212,473A 1973-10-30 1974-10-29 Deep diode varactor Expired CA1013480A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41114973A 1973-10-30 1973-10-30

Publications (1)

Publication Number Publication Date
CA1013480A true CA1013480A (en) 1977-07-05

Family

ID=23627775

Family Applications (1)

Application Number Title Priority Date Filing Date
CA212,473A Expired CA1013480A (en) 1973-10-30 1974-10-29 Deep diode varactor

Country Status (5)

Country Link
JP (1) JPS5080782A (en)
CA (1) CA1013480A (en)
DE (1) DE2450935A1 (en)
FR (1) FR2249447B1 (en)
GB (1) GB1493828A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2441924A1 (en) * 1978-11-15 1980-06-13 Labo Electronique Physique Variable capacity semiconductor and frequency multiplier circuit - is grown as series of diodes spaced by N-type layers and uses gallium:arsenide as implantation substance
US5689031A (en) 1995-10-17 1997-11-18 Exxon Research & Engineering Company Synthetic diesel fuel and process for its production

Also Published As

Publication number Publication date
FR2249447A1 (en) 1975-05-23
JPS5080782A (en) 1975-07-01
FR2249447B1 (en) 1978-09-29
GB1493828A (en) 1977-11-30
DE2450935A1 (en) 1975-05-07

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