BR9604054A - Speaker box structure - Google Patents

Speaker box structure

Info

Publication number
BR9604054A
BR9604054A BR9604054A BR9604054A BR9604054A BR 9604054 A BR9604054 A BR 9604054A BR 9604054 A BR9604054 A BR 9604054A BR 9604054 A BR9604054 A BR 9604054A BR 9604054 A BR9604054 A BR 9604054A
Authority
BR
Brazil
Prior art keywords
box structure
speaker box
speaker
box
Prior art date
Application number
BR9604054A
Other languages
Portuguese (pt)
Inventor
Jong Man Park
Original Assignee
Lg Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Electronics Inc filed Critical Lg Electronics Inc
Publication of BR9604054A publication Critical patent/BR9604054A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827Vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666Vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
BR9604054A 1995-08-01 1996-08-01 Speaker box structure BR9604054A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950023682A KR0172852B1 (en) 1995-08-01 1995-08-01 Thin film transistor and its fabrication method

Publications (1)

Publication Number Publication Date
BR9604054A true BR9604054A (en) 1998-06-16

Family

ID=19422583

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9604054A BR9604054A (en) 1995-08-01 1996-08-01 Speaker box structure

Country Status (2)

Country Link
KR (1) KR0172852B1 (en)
BR (1) BR9604054A (en)

Also Published As

Publication number Publication date
KR970013118A (en) 1997-03-29
KR0172852B1 (en) 1999-03-30

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Legal Events

Date Code Title Description
FB34 Technical and formal requirements: requirement - article 34 of industrial property law
B06A Notification to applicant to reply to the report for non-patentability or inadequacy of the application according art. 36 industrial patent law
B09A Decision: intention to grant
B16A Patent or certificate of addition of invention granted

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 20/05/2008, OBSERVADAS AS CONDICOES LEGAIS.

B24C Patent annual fee: request for for restoration

Free format text: REFERENTE A 15A E 16A ANUIDADE(S), CONFORME ART. 87 DA LPI.

B24H Lapse because of non-payment of annual fees (definitively: art 78 iv lpi)
B24F Patent annual fee: publication cancelled

Free format text: ANULADA A PUBLICACAO CODIGO 24.8 NA RPI NO 2258 DE 15/04/2014 POR TER SIDO INDEVIDA.

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE AS 15A E 16A ANUIDADES.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2606 DE 15-12-2020 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.