BR102021010253A2 - Photovoltaic device composed of bifeo3-pbthio3, a material with perovskite structure - Google Patents

Photovoltaic device composed of bifeo3-pbthio3, a material with perovskite structure

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Publication number
BR102021010253A2
BR102021010253A2 BR102021010253A BR102021010253A BR102021010253A2 BR 102021010253 A2 BR102021010253 A2 BR 102021010253A2 BR 102021010253 A BR102021010253 A BR 102021010253A BR 102021010253 A BR102021010253 A BR 102021010253A BR 102021010253 A2 BR102021010253 A2 BR 102021010253A2
Authority
BR
Brazil
Prior art keywords
photovoltaic
electrode
layer
active layer
bifeo3
Prior art date
Application number
BR102021010253A
Other languages
Portuguese (pt)
Other versions
BR102021010253B1 (en
Inventor
Augusto Castelli Astrath Eduardo
Aparecido Dos Santos Ivair
Cardoso Dias Luciano
Fernando Cótica Luiz
Maurício Mazur
Gabriella Moretti Bonadio Taiana
Fernandes Freitas Valdirlei
Original Assignee
Univ Estadual De Maringa
Univ Estadual Do Centro Oeste
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Estadual De Maringa, Univ Estadual Do Centro Oeste filed Critical Univ Estadual De Maringa
Priority to BR102021010253-5A priority Critical patent/BR102021010253B1/en
Publication of BR102021010253A2 publication Critical patent/BR102021010253A2/en
Publication of BR102021010253B1 publication Critical patent/BR102021010253B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

dispositivo fotovoltaico composto por bifeo3-pbtio3, um material com estrutura perovskita. o invento, dispositivo fotovoltaico composto por bifeo3-pbtio3, um material com estrutura perovskita, está incluído no campo técnico da eletricidade (classificação h), mais precisamente na geração de energia elétrica por conversão de radiação infra-vermelha, luz visível ou luz ultravioleta usando módulos fotovoltaicos (classificação h02s), e refere-se a uma célula solar confeccionada com filmes finos de bifeo3-pbtio3 (bfpt) dispostos em um arranjo multicamadas. esse arranjo, em linhas gerais, pode ser composto de: i ) substrato recoberto por uma camada eletricamente ativa (1º eletrodo)/camada fotovoltaica da perovskita bfpt/camada eletricamente ativa (2º eletrodo, homogêneo ou disposto na forma de barras interligadas); ou ii-) substrato recoberto por uma camada eletricamente ativa (1º eletrodo)/camada ou camadas de carreadores de carga elétrica/camada fotovoltaica da perovskita bfpt/ camada ou camadas de carreadores de carga elétrica/camada eletricamente ativa (2º eletrodo, homogêneo ou disposto na forma de barras interligadas). o dispositivo opera interligando os dois eletrodos a uma carga (lâmpada etc). a camada ativa de bfpt é usada para gerar uma diferença de potencial elétrico nos terminais dos eletrodos (efeito fotovoltaico - geração de pares elétron-buraco) e, em função disso, injetar um fluxo de cargas elétricas nos mesmos (usado para realizar trabalho útil - acendimento de lâmpadas etc). como os pares elétron-buraco podem recombinar-se, suprimindo o efeito fotovoltaico, materiais carreadores de cargas elétricas, que absorvem essas cargas e as conduzem para os eletrodos, impedem a recombinação e mantêm o funcionamento do dispositivo.photovoltaic device composed of bifeo3-pthio3, a material with perovskite structure. the invention, a photovoltaic device composed of bifeo3-pbthio3, a material with perovskite structure, is included in the technical field of electricity (classification h), more precisely in the generation of electrical energy by converting infrared radiation, visible light or ultraviolet light using photovoltaic modules (h02s classification), and refers to a solar cell made of thin films of bifeo3-pbthio3 (bfpt) arranged in a multilayer arrangement. this arrangement, in general terms, can be composed of: i ) substrate covered by an electrically active layer (1st electrode)/photovoltaic layer of bfpt perovskite/electrically active layer (2nd electrode, homogeneous or arranged in the form of interconnected bars); or ii-) substrate covered by an electrically active layer (1st electrode) / layer or layers of electrical charge carriers / photovoltaic layer of bfpt perovskite / layer or layers of electrical charge carriers / electrically active layer (2nd electrode, homogeneous or arranged in the form of interlocking bars). the device operates by connecting the two electrodes to a load (lamp etc). the active layer of bfpt is used to generate an electrical potential difference at the electrode terminals (photovoltaic effect - generation of electron-hole pairs) and, as a result, inject a flow of electrical charges into the electrodes (used to perform useful work - lighting of lamps, etc.). as electron-hole pairs can recombine, suppressing the photovoltaic effect, materials carrying electrical charges, which absorb these charges and conduct them to the electrodes, prevent recombination and keep the device working.

BR102021010253-5A 2021-05-27 2021-05-27 PHOTOVOLTAIC DEVICE COMPOSED OF BIFEO3-PBTIO3, A MATERIAL WITH PEROVSKITE STRUCTURE BR102021010253B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BR102021010253-5A BR102021010253B1 (en) 2021-05-27 2021-05-27 PHOTOVOLTAIC DEVICE COMPOSED OF BIFEO3-PBTIO3, A MATERIAL WITH PEROVSKITE STRUCTURE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BR102021010253-5A BR102021010253B1 (en) 2021-05-27 2021-05-27 PHOTOVOLTAIC DEVICE COMPOSED OF BIFEO3-PBTIO3, A MATERIAL WITH PEROVSKITE STRUCTURE

Publications (2)

Publication Number Publication Date
BR102021010253A2 true BR102021010253A2 (en) 2022-03-15
BR102021010253B1 BR102021010253B1 (en) 2022-12-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
BR102021010253-5A BR102021010253B1 (en) 2021-05-27 2021-05-27 PHOTOVOLTAIC DEVICE COMPOSED OF BIFEO3-PBTIO3, A MATERIAL WITH PEROVSKITE STRUCTURE

Country Status (1)

Country Link
BR (1) BR102021010253B1 (en)

Also Published As

Publication number Publication date
BR102021010253B1 (en) 2022-12-06

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Legal Events

Date Code Title Description
B03B Publication of an application: publication anticipated [chapter 3.2 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 27/05/2021, OBSERVADAS AS CONDICOES LEGAIS