BR0017133A - Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet - Google Patents

Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet

Info

Publication number
BR0017133A
BR0017133A BR0017133-6A BR0017133A BR0017133A BR 0017133 A BR0017133 A BR 0017133A BR 0017133 A BR0017133 A BR 0017133A BR 0017133 A BR0017133 A BR 0017133A
Authority
BR
Brazil
Prior art keywords
deposition
thin film
plasma
plasma jet
surface modification
Prior art date
Application number
BR0017133-6A
Other languages
Portuguese (pt)
Inventor
Masatsugu Izu
Joachim Doehler
Scott Jones
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority claimed from PCT/US2000/004402 external-priority patent/WO2001063639A1/en
Publication of BR0017133A publication Critical patent/BR0017133A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

"APARELHO DE MODIFICAçãO SUPERFICIAL OU DEPOSIçãO DE PELìCULA FINA POR JATO DE PLASMA, E, MéTODO DE ATAQUE QUìMICO OU DEPOSIçãO DE PELìCULA FINA POR JATO DE PLASMA". Um novo método de modificação superficial ou deposição de película fina de CVD intensificado por plasma, de alta velocidade e plasma de alta qualidade, e aparelho. A invenção emprega energia tanto de microondas (5) quanto de feixes eletrónicos (6) para a criação de um plasma de espécies excitadas que modificam a superfície de substratos (2) ou são depositadas sobre os substratos para formar a película fina desejada. A invenção também emprega um sistema de jato de gás (3) para introduzir as espécies de reação no plasma. Este sistema de jato de gás (3) leva em conta a velocidade de deposição mais elevada do que os processos de PECVD convencionais, enquanto mantém a alta qualidade desejada dos materiais depositados."SURFACE MODIFICATION APPLIANCE OR DEPOSITION OF FINE FILM BY PLASMA JET, AND, CHEMICAL ATTACK METHOD OR DEPOSITION OF FINE FILM BY PLASMA JET". A new method of surface modification or thin film deposition of CVD enhanced by plasma, high speed and high quality plasma, and apparatus. The invention employs both microwave energy (5) and electronic beams (6) to create a plasma of excited species that modify the surface of substrates (2) or are deposited on the substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reaction species into the plasma. This gas jet system (3) takes into account the higher deposition speed than conventional PECVD processes, while maintaining the desired high quality of the deposited materials.

BR0017133-6A 2000-02-22 2000-02-22 Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet BR0017133A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/004402 WO2001063639A1 (en) 1998-01-22 2000-02-22 E-beam/microwave gas jet pecvd method and apparatus for depositing and/or surface modification of thin film materials

Publications (1)

Publication Number Publication Date
BR0017133A true BR0017133A (en) 2002-11-05

Family

ID=21741076

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0017133-6A BR0017133A (en) 2000-02-22 2000-02-22 Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet

Country Status (8)

Country Link
EP (1) EP1275129B1 (en)
JP (1) JP2003524705A (en)
KR (1) KR100517858B1 (en)
CN (1) CN1303630C (en)
BR (1) BR0017133A (en)
CA (1) CA2399895A1 (en)
DE (1) DE60040349D1 (en)
MX (1) MXPA02008190A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
US11081345B2 (en) * 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN110367144B (en) * 2019-08-03 2024-01-26 长沙学院 Semi-closed pet blow-drying box
CN115480598B (en) * 2022-08-15 2023-09-29 北京空间机电研究所 Optical mirror surface temperature control method and measurement and control system in ion beam processing process
CN115928051B (en) * 2022-11-29 2024-08-27 香港中文大学（深圳） Diamond nano needle array light absorption layer and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
JP2868949B2 (en) * 1992-03-05 1999-03-10 キヤノン株式会社 Thin film production equipment
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
US5637962A (en) * 1995-06-09 1997-06-10 The Regents Of The University Of California Office Of Technology Transfer Plasma wake field XUV radiation source
JPH09245344A (en) * 1996-03-13 1997-09-19 Kao Corp Apparatus for production of recording medium and production of recording medium

Also Published As

Publication number Publication date
KR20020086567A (en) 2002-11-18
CN1303630C (en) 2007-03-07
MXPA02008190A (en) 2002-11-29
EP1275129B1 (en) 2008-09-24
EP1275129A1 (en) 2003-01-15
KR100517858B1 (en) 2005-09-29
EP1275129A4 (en) 2004-05-26
JP2003524705A (en) 2003-08-19
DE60040349D1 (en) 2008-11-06
CN1452778A (en) 2003-10-29
CA2399895A1 (en) 2001-08-30

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A, 6A, 7A E 8A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 1929 DE 26/12/2007.