BG61824B1 - Weak superconducting contact (josephson contact) of high temperature superconducting materials and method for its making - Google Patents

Weak superconducting contact (josephson contact) of high temperature superconducting materials and method for its making Download PDF

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Publication number
BG61824B1
BG61824B1 BG99974A BG9997495A BG61824B1 BG 61824 B1 BG61824 B1 BG 61824B1 BG 99974 A BG99974 A BG 99974A BG 9997495 A BG9997495 A BG 9997495A BG 61824 B1 BG61824 B1 BG 61824B1
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Bulgaria
Prior art keywords
superconducting
contact
layer
weak
energy
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BG99974A
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Bulgarian (bg)
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BG99974A (en
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Тинчев Савчо
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Priority to BG99974A priority Critical patent/BG61824B1/en
Priority to DE19634081A priority patent/DE19634081A1/en
Publication of BG99974A publication Critical patent/BG99974A/en
Publication of BG61824B1 publication Critical patent/BG61824B1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

The invention relates to a weak superconducting contact suchas of YBa2Cu307. By the method, more than one bombardment(implantation) by quantity and type of energy and/or ions isapplied, where the conducting channel is created in the interiorof the supperconductive layer. The temperature range of operationis extended by the method and the electronic devices made with itand there is no need for the selection of parameters formodification such as energy and ion doses due to the inevitabletolerences in the thicknesses of the superconducting layer, therepetitiveness of reults is improved and the percentage of the fitfor operation instruments as a result of the formation of theconductive channel within the interior of the superconductinglayer is increased where this layer is superior.

Description

Изобретението се отнася до слаб свръхпроводящ контакт, по-специално джозефсонов контакт от високотемпературни свръхпроводящи материали, по-специално от УВа2Си3О7, и метод за изготвянето му.The invention relates to a weak superconducting contact, in particular a Josephson contact of high temperature superconducting materials, in particular of UVa 2 Cu 3 O 7 , and a method for its preparation.

Предшестващо състояние на техникатаBACKGROUND OF THE INVENTION

Известни са слаби свръхпроводящи контакти с джозефсонови свойства, изготвени от високотемпературни свръхпроводящи материали, при които слабата връзка се създава чрез бомбардировка на малък участък от същия материал с ускорени йони. При тази бомбардировка ускорените йони модифицират материала и свръхпроводящият елемент работи като 5-Ν5 (свръхпроводник - нормален метал - свръхпроводник) или като 5-5’5-(свръх проводник друг свръхпроводник-свръхпроводник) [ 1 ].Known weak superconducting contacts with Josephson properties made of high temperature superconducting materials, in which the weak bond is created by bombarding a small section of the same material with accelerated ions. In this bombardment, accelerated ions modify the material and the superconducting element operates as 5-Ν5 (superconductor - normal metal - superconductor) or 5-5'5- (superconductor another superconductor-superconductor) [1].

Недостатъците на тези свръхпроводящи изделия са следните. Работният канал променя силно сечението си при промяна на температурата, вследствие на което температурният диапазон, в който работят, е много тесен, съществува силна зависимост от дебелината на слоя, което налага подбиране на параметрите на бомбардиращите частици (йони) за всеки слой, поради неизбежните толеранси на дебелината им; работният проводящ канал е формиран точно върху интерфейса между подложката и свръхпроводящия материал, където свръхпроводящият материал е с много дефекти.The disadvantages of these superconducting products are the following. The working channel changes its cross section strongly as the temperature changes, which makes the temperature range in which they operate very narrow, there is a strong dependence on the thickness of the layer, which necessitates the selection of the parameters of the bombarding particles (ions) for each layer, due to the inevitable their thickness tolerances; the working conductive channel is formed exactly at the interface between the substrate and the superconducting material, where the superconducting material has many defects.

Техническа същност на изобретениетоSUMMARY OF THE INVENTION

Методът съгласно изобретението използва повече от една бомбардировка (имплантация) с различни по вид и количество енергии и/или частици (йони), при което проводящият канал се създава във вътрешността на свръхпроводящия слой.The method according to the invention uses more than one bombardment (implantation) with different types and amounts of energy and / or particles (ions), whereby the conduction channel is created inside the superconducting layer.

Предимствата на електронните изделия, изготвени по метода се състоят в следното: разширява се температурния диапазон на работата им; отпада необходимостта от подбиране на параметрите на модифициране (енергия и доза на йоните), поради неизбежните толеранси в дебелината на свръхпроводящия слой; подобрява се повторяемостта на резултатите, вследствие на формирането на проводящия канал във вътрешността на свръхпроводящия слой, където той е по-съвършен.The advantages of electronic products made by the method are as follows: the temperature range of their work is expanded; the need to select modification parameters (energy and ion dose) is eliminated due to the inevitable tolerances in the thickness of the superconducting layer; the repeatability of the results is improved due to the formation of the conduction channel inside the superconducting layer, where it is more perfect.

Примерно изпълнение на изобретениетоAn exemplary embodiment of the invention

Фигура 1 илюстрира едно примерно изпълнение на метода съгласно изобретението за изготвяне на свръхпроводящ контакт. От високотемпературен свръхпроводящ слой 2 (например УВа2Си3О7) с дебелина 200 пт, нанесен например с лазерна аблация върху подложка 1 от 5гТЮ3, посредством фотолитография и ецване е формиран мост 3 с размери около 5 рт ширина и 10 цт дължина, след което върху цялата структура е нанесен слой от електронен резист 6 (например РММА), служещ за имплантационна маска. В нея посредством електроннолъчева литография се формира канал 5 със субмикронни размери, под който материалът се модифицира. Модифицирането се осъществява с ускорени йони 4 (например Ο, Ν, Не или други) с различна по количество и вид енергия, така че формирането на проводящия канал да стане във вътрешността на свръхпроводящия слой.Figure 1 illustrates an exemplary embodiment of the method according to the invention for making a superconducting contact. A high-temperature superconducting layer 2 (for example UVa 2 Cu 3 O 7 ) with a thickness of 200 pt, applied, for example, by laser ablation on a substrate 1 of 5gTY 3 , is formed by photolithography and etching to form a bridge 3 of about 5 µm wide and 10 µm long. thereafter, an electronic resist layer 6 (eg PMMA) is applied to the entire structure to serve as an implant mask. In it, a channel 5 of submicron size is formed by electron beam lithography, under which the material is modified. The modification is accomplished by accelerated ions 4 (e.g., Ο, Ν, No, or others) with different amounts and types of energy so that the formation of the conducting channel takes place inside the superconducting layer.

Фигура 2 илюстрира разпределението на критичната температура Тс по дълбочината на свръхпроводящия слой, имплантиран двукратно с кислородни йони с енергия 200 кеУ, доза 1,5.1013 йона/ст2 и енергия 30 кеУ, доза 5,2.1012 йона/ст2. Очевидно е, че при работна температура 77 К проводящият канал се намира във вътрешността на свръхпроводящия слой.Figure 2 illustrates the distribution of the critical temperature Tc over the depth of the superconducting layer implanted twice with oxygen ions of 200 keU energy, dose 1.5.10 13 ion / cm 2 and energy 30 keU, dose 5.2.10 12 ion / cm 2 . Obviously, at an operating temperature of 77 K, the conductive channel is located inside the superconducting layer.

Приложение на изобретениетоApplication of the invention

Контактът съгласно изобретението може да се използва в свръхпроводящи квантови интерферометри (СКВИД), както и в други устройства на свръхпроводниковата електроника, например микровълнови приемни устройства, аналогово-цифрови преобразуватели, логически схеми и памети.The contact according to the invention can be used in superconducting quantum interferometers (SQUID) as well as in other devices of superconducting electronics, such as microwave receivers, analog-to-digital converters, logic circuits and memories.

Claims (2)

1. Слаб свръхпроводящ контакт, по-специално джозефсонов контакт от високотемпературни свръхпроводящи материали, състоящ се от мост с микронни размери, напречно на който свръхпроводящите свойства на материала са отслабени в област със субмикронни размери, характеризиращ се с това, че проводящият канал е формиран във вътрешността 10 или непосредствено под повърхността на свръхпроводящия слой.1. Weak superconducting contact, in particular a Josephson contact of high temperature superconducting materials, comprising a micron-sized bridge transversely to which the superconducting properties of the material are weakened in a submicron-size region, characterized in that the conduction channel is inside 10 or just below the surface of the superconducting layer. 2. Метод за създаване на слаб свръхпроводящ контакт, по-специално джозефсонов контакт от високотемпературни свръхпрово- 15 дящи материали съгласно претенция 1, при който свръхпроводящият слой се модифицира с помощта на ускорени частици, характеризиращ се с това, че при модифицирането се из5 ползва повече от една йонна имплантация с различни по количество и вид енергия и йони.2. A method for creating a weak superconducting contact, in particular a Josephson contact of high-temperature superconducting materials according to claim 1, wherein the superconducting layer is modified by accelerated particles, characterized in that it uses more than 5 from an ion implant with different amounts and types of energy and ions.
BG99974A 1995-09-04 1995-09-04 Weak superconducting contact (josephson contact) of high temperature superconducting materials and method for its making BG61824B1 (en)

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Application Number Priority Date Filing Date Title
BG99974A BG61824B1 (en) 1995-09-04 1995-09-04 Weak superconducting contact (josephson contact) of high temperature superconducting materials and method for its making
DE19634081A DE19634081A1 (en) 1995-09-04 1996-08-23 Weakly superconductor Josephson contact of high temp. surge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG99974A BG61824B1 (en) 1995-09-04 1995-09-04 Weak superconducting contact (josephson contact) of high temperature superconducting materials and method for its making

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BG99974A BG99974A (en) 1997-04-30
BG61824B1 true BG61824B1 (en) 1998-06-30

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US5401716A (en) * 1987-04-15 1995-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing superconducting patterns
US5053383A (en) * 1988-03-29 1991-10-01 At&T Bell Laboratories Method of reducing critical current density of oxide superconductors by radiation damage
FI950805A (en) * 1994-02-24 1995-08-25 Shimadzu Corp Superconducting tunnel joint and method of making it

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DE19634081A1 (en) 1997-03-06

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