BG46605A3 - Silicon thermodetector resistance - Google Patents
Silicon thermodetector resistanceInfo
- Publication number
- BG46605A3 BG46605A3 BG074316A BG7431686A BG46605A3 BG 46605 A3 BG46605 A3 BG 46605A3 BG 074316 A BG074316 A BG 074316A BG 7431686 A BG7431686 A BG 7431686A BG 46605 A3 BG46605 A3 BG 46605A3
- Authority
- BG
- Bulgaria
- Prior art keywords
- layers
- resistance
- diffuse
- diameter
- base
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Landscapes
- Measuring Volume Flow (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Съпротивлението е приложимо за определяне температурата и скоростта на потоци в температурен интервал от -55' до 125'с то е с опростена конструкция и е изградено на базата на силициев монокристал, произведен по обичайната планарна технология, като е постигнато колебание на съпротивлението от плюс минус 1% до плюс минус 5%. Съпротивлениетосе състои от дифузни слоеве от тип, еднакъв с този на носещия кристал, и метални изводи, разположени върху дифузните слоеве, един от които е избран за базисен и представлява общ извод. Останалите дифузни слоеве, заедно с базисния слой и носещия кристал, образуват различни съпротивления, предимно с нарастващи стойности, чиито изводи са оформени отделно в слоевете. Последните имат различни диаметри и са разположени по дължината на окръжност, в центъра на която е разположен базисният стой. При друг вариант дифузните слоеве са с еднакви диаметри и разположени върху спирална линия, а базисният слой е с диаметър, равен на диаметъра на останалите слоеве и разположен в центъра на спиралната линия. 4 претенции, 5 фигуриThe resistance is applicable to determine the temperature and flow rate in the temperature range from -55' to 125', it has a simplified construction and is built on the basis of a silicon single crystal produced by the usual planar technology, achieving a resistance fluctuation of plus or minus 1% to plus or minus 5%. The resistor consists of diffuse layers of the same type as the carrier crystal, and metal terminals located on the diffuse layers, one of which is chosen as the base and is a common terminal. The remaining diffuse layers, together with the base layer and the carrier crystal, form different resistances, mostly with increasing values, the conclusions of which are formed separately in the layers. The latter have different diameters and are located along the length of a circle, in the center of which the base stand is located. In another variant, the diffuse layers have the same diameter and are located on a spiral line, and the base layer has a diameter equal to the diameter of the other layers and is located in the center of the spiral line. 4 claims, 5 figures
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
HU851158A HU196854B (en) | 1985-03-27 | 1985-03-27 | Silicon heat sensor with prescribed rate value of resistance, operating on the principle of temperature-dependence of propagation resistance |
Publications (1)
Publication Number | Publication Date |
---|---|
BG46605A3 true BG46605A3 (en) | 1990-01-15 |
Family
ID=10953096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BG074316A BG46605A3 (en) | 1985-03-27 | 1986-03-27 | Silicon thermodetector resistance |
Country Status (2)
Country | Link |
---|---|
BG (1) | BG46605A3 (en) |
HU (1) | HU196854B (en) |
-
1985
- 1985-03-27 HU HU851158A patent/HU196854B/en not_active IP Right Cessation
-
1986
- 1986-03-27 BG BG074316A patent/BG46605A3/en unknown
Also Published As
Publication number | Publication date |
---|---|
HUT40859A (en) | 1987-02-27 |
HU196854B (en) | 1989-01-30 |
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