BG46605A3 - Silicon thermodetector resistance - Google Patents

Silicon thermodetector resistance

Info

Publication number
BG46605A3
BG46605A3 BG074316A BG7431686A BG46605A3 BG 46605 A3 BG46605 A3 BG 46605A3 BG 074316 A BG074316 A BG 074316A BG 7431686 A BG7431686 A BG 7431686A BG 46605 A3 BG46605 A3 BG 46605A3
Authority
BG
Bulgaria
Prior art keywords
layers
resistance
diffuse
diameter
base
Prior art date
Application number
BG074316A
Other languages
Bulgarian (bg)
Inventor
Gyula Pasztor
Janos Berkecz
Istvan Havasi
Laszlo Kerek
Jozsef Molnar
Ficza Marianna Nagygeb
Original Assignee
Mikroelektronikai Vallalat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikroelektronikai Vallalat filed Critical Mikroelektronikai Vallalat
Publication of BG46605A3 publication Critical patent/BG46605A3/en

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  • Measuring Volume Flow (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

Съпротивлението е приложимо за определяне температурата и скоростта на потоци в температурен интервал от -55' до 125'с то е с опростена конструкция и е изградено на базата на силициев монокристал, произведен по обичайната планарна технология, като е постигнато колебание на съпротивлението от плюс минус 1% до плюс минус 5%. Съпротивлениетосе състои от дифузни слоеве от тип, еднакъв с този на носещия кристал, и метални изводи, разположени върху дифузните слоеве, един от които е избран за базисен и представлява общ извод. Останалите дифузни слоеве, заедно с базисния слой и носещия кристал, образуват различни съпротивления, предимно с нарастващи стойности, чиито изводи са оформени отделно в слоевете. Последните имат различни диаметри и са разположени по дължината на окръжност, в центъра на която е разположен базисният стой. При друг вариант дифузните слоеве са с еднакви диаметри и разположени върху спирална линия, а базисният слой е с диаметър, равен на диаметъра на останалите слоеве и разположен в центъра на спиралната линия. 4 претенции, 5 фигуриThe resistance is applicable to determine the temperature and flow rate in the temperature range from -55' to 125', it has a simplified construction and is built on the basis of a silicon single crystal produced by the usual planar technology, achieving a resistance fluctuation of plus or minus 1% to plus or minus 5%. The resistor consists of diffuse layers of the same type as the carrier crystal, and metal terminals located on the diffuse layers, one of which is chosen as the base and is a common terminal. The remaining diffuse layers, together with the base layer and the carrier crystal, form different resistances, mostly with increasing values, the conclusions of which are formed separately in the layers. The latter have different diameters and are located along the length of a circle, in the center of which the base stand is located. In another variant, the diffuse layers have the same diameter and are located on a spiral line, and the base layer has a diameter equal to the diameter of the other layers and is located in the center of the spiral line. 4 claims, 5 figures

BG074316A 1985-03-27 1986-03-27 Silicon thermodetector resistance BG46605A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU851158A HU196854B (en) 1985-03-27 1985-03-27 Silicon heat sensor with prescribed rate value of resistance, operating on the principle of temperature-dependence of propagation resistance

Publications (1)

Publication Number Publication Date
BG46605A3 true BG46605A3 (en) 1990-01-15

Family

ID=10953096

Family Applications (1)

Application Number Title Priority Date Filing Date
BG074316A BG46605A3 (en) 1985-03-27 1986-03-27 Silicon thermodetector resistance

Country Status (2)

Country Link
BG (1) BG46605A3 (en)
HU (1) HU196854B (en)

Also Published As

Publication number Publication date
HUT40859A (en) 1987-02-27
HU196854B (en) 1989-01-30

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