BE846214A - Procede de separation d'un matiere semi-conducteur de grande purete - Google Patents
Procede de separation d'un matiere semi-conducteur de grande pureteInfo
- Publication number
- BE846214A BE846214A BE170640A BE170640A BE846214A BE 846214 A BE846214 A BE 846214A BE 170640 A BE170640 A BE 170640A BE 170640 A BE170640 A BE 170640A BE 846214 A BE846214 A BE 846214A
- Authority
- BE
- Belgium
- Prior art keywords
- separating
- semiconductor material
- high pure
- pure semiconductor
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752541284 DE2541284A1 (de) | 1975-09-16 | 1975-09-16 | Verfahren zur abscheidung von hochreinem halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
BE846214A true BE846214A (fr) | 1977-03-15 |
Family
ID=5956608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE170640A BE846214A (fr) | 1975-09-16 | 1976-09-15 | Procede de separation d'un matiere semi-conducteur de grande purete |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5236469A (fr) |
BE (1) | BE846214A (fr) |
DE (1) | DE2541284A1 (fr) |
DK (1) | DK373176A (fr) |
IT (1) | IT1078738B (fr) |
NL (1) | NL7608327A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2158324C1 (ru) * | 1999-11-02 | 2000-10-27 | Закрытое акционерное общество "Панджшер-Холдинг" | Способ изготовления исходного поликристаллического кремния в виде пластин с большой площадью поверхности и камера для осаждения кремния |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1306842A (fr) * | 1960-11-29 | 1962-10-19 | Merck & Co Inc | Procédé et appareil de fabrication de semi-conducteurs à cristal unique |
DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
-
1975
- 1975-09-16 DE DE19752541284 patent/DE2541284A1/de active Pending
-
1976
- 1976-07-23 JP JP8737276A patent/JPS5236469A/ja active Pending
- 1976-07-27 NL NL7608327A patent/NL7608327A/xx unknown
- 1976-08-18 DK DK373176A patent/DK373176A/da unknown
- 1976-09-14 IT IT5125676A patent/IT1078738B/it active
- 1976-09-15 BE BE170640A patent/BE846214A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
NL7608327A (nl) | 1977-03-18 |
IT1078738B (it) | 1985-05-08 |
JPS5236469A (en) | 1977-03-19 |
DK373176A (da) | 1977-03-17 |
DE2541284A1 (de) | 1977-03-24 |
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