BE846214A - Procede de separation d'un matiere semi-conducteur de grande purete - Google Patents

Procede de separation d'un matiere semi-conducteur de grande purete

Info

Publication number
BE846214A
BE846214A BE170640A BE170640A BE846214A BE 846214 A BE846214 A BE 846214A BE 170640 A BE170640 A BE 170640A BE 170640 A BE170640 A BE 170640A BE 846214 A BE846214 A BE 846214A
Authority
BE
Belgium
Prior art keywords
separating
semiconductor material
high pure
pure semiconductor
semiconductor
Prior art date
Application number
BE170640A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE846214A publication Critical patent/BE846214A/fr

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
BE170640A 1975-09-16 1976-09-15 Procede de separation d'un matiere semi-conducteur de grande purete BE846214A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752541284 DE2541284A1 (de) 1975-09-16 1975-09-16 Verfahren zur abscheidung von hochreinem halbleitermaterial

Publications (1)

Publication Number Publication Date
BE846214A true BE846214A (fr) 1977-03-15

Family

ID=5956608

Family Applications (1)

Application Number Title Priority Date Filing Date
BE170640A BE846214A (fr) 1975-09-16 1976-09-15 Procede de separation d'un matiere semi-conducteur de grande purete

Country Status (6)

Country Link
JP (1) JPS5236469A (fr)
BE (1) BE846214A (fr)
DE (1) DE2541284A1 (fr)
DK (1) DK373176A (fr)
IT (1) IT1078738B (fr)
NL (1) NL7608327A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2158324C1 (ru) * 1999-11-02 2000-10-27 Закрытое акционерное общество "Панджшер-Холдинг" Способ изготовления исходного поликристаллического кремния в виде пластин с большой площадью поверхности и камера для осаждения кремния

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1306842A (fr) * 1960-11-29 1962-10-19 Merck & Co Inc Procédé et appareil de fabrication de semi-conducteurs à cristal unique
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase

Also Published As

Publication number Publication date
NL7608327A (nl) 1977-03-18
IT1078738B (it) 1985-05-08
JPS5236469A (en) 1977-03-19
DK373176A (da) 1977-03-17
DE2541284A1 (de) 1977-03-24

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