BE837009A - PROCESS AND APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICUM FOR SEMICONDUCTORS - Google Patents

PROCESS AND APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICUM FOR SEMICONDUCTORS

Info

Publication number
BE837009A
BE837009A BE163054A BE163054A BE837009A BE 837009 A BE837009 A BE 837009A BE 163054 A BE163054 A BE 163054A BE 163054 A BE163054 A BE 163054A BE 837009 A BE837009 A BE 837009A
Authority
BE
Belgium
Prior art keywords
silicum
semiconductors
producing polycrystalline
polycrystalline
producing
Prior art date
Application number
BE163054A
Other languages
French (fr)
Inventor
B D Stone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE837009A publication Critical patent/BE837009A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
BE163054A 1974-12-26 1975-12-23 PROCESS AND APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICUM FOR SEMICONDUCTORS BE837009A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53669274A 1974-12-26 1974-12-26

Publications (1)

Publication Number Publication Date
BE837009A true BE837009A (en) 1976-06-23

Family

ID=24139526

Family Applications (1)

Application Number Title Priority Date Filing Date
BE163054A BE837009A (en) 1974-12-26 1975-12-23 PROCESS AND APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICUM FOR SEMICONDUCTORS

Country Status (4)

Country Link
JP (1) JPS5189817A (en)
BE (1) BE837009A (en)
DE (1) DE2558387A1 (en)
GB (1) GB1532649A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3166609D1 (en) * 1980-07-28 1984-11-15 Monsanto Co Improved method for producing semiconductor grade silicon
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer
DE10107255C1 (en) 2001-02-16 2002-06-20 Babcock Bsh Gmbh Veneer cutting machine, for cutting veneer from a block of wood, has reciprocating table, cutter, pressing beams, and also comprises means for cooling guide rails
DE102006037020A1 (en) * 2006-08-08 2008-02-14 Wacker Chemie Ag Method and apparatus for producing high purity polycrystalline silicon with reduced dopant content
CN101624724B (en) * 2008-08-22 2012-07-25 江西赛维Ldk光伏硅科技有限公司 Method, device and device assembly for taking out multiple polysilicon rods
DE102009003368B3 (en) * 2009-01-22 2010-03-25 G+R Polysilicon Gmbh Reactor for the production of polycrystalline silicon after the monosilane process
DE102009043950B4 (en) 2009-09-04 2012-02-02 G+R Technology Group Ag Reactor for the production of polycrystalline silicon
EP2423352A1 (en) * 2010-08-24 2012-02-29 Centesil S.L. Thermal shield for silicon production reactors
DE102013200660A1 (en) 2013-01-17 2014-07-17 Wacker Chemie Ag Method of depositing polycrystalline silicon
CN116490461A (en) * 2020-11-27 2023-07-25 株式会社德山 Polycrystalline silicon rod, method for producing polycrystalline silicon rod, and method for heat-treating polycrystalline silicon

Also Published As

Publication number Publication date
JPS5189817A (en) 1976-08-06
GB1532649A (en) 1978-11-15
DE2558387A1 (en) 1976-07-08

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: MONSANTO CY

Effective date: 19851231