BE831612A - Dispositif resistant en silicium polycristallin pour circuits integreset procede pour le fabriquer - Google Patents
Dispositif resistant en silicium polycristallin pour circuits integreset procede pour le fabriquerInfo
- Publication number
- BE831612A BE831612A BE158505A BE158505A BE831612A BE 831612 A BE831612 A BE 831612A BE 158505 A BE158505 A BE 158505A BE 158505 A BE158505 A BE 158505A BE 831612 A BE831612 A BE 831612A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- integrated circuits
- polycrystalline silicon
- silicon device
- resistant polycrystalline
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
- H01L29/78657—SOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49111574A | 1974-07-23 | 1974-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE831612A true BE831612A (fr) | 1975-11-17 |
Family
ID=23950851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE158505A BE831612A (fr) | 1974-07-23 | 1975-07-22 | Dispositif resistant en silicium polycristallin pour circuits integreset procede pour le fabriquer |
Country Status (7)
Country | Link |
---|---|
US (1) | US4072974A (xx) |
JP (1) | JPS5140086A (xx) |
AU (1) | AU498134B2 (xx) |
BE (1) | BE831612A (xx) |
CA (1) | CA1040321A (xx) |
DE (2) | DE2559729A1 (xx) |
GB (1) | GB1505105A (xx) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2009502B (en) * | 1977-12-06 | 1982-03-10 | Rockwell International Corp | Field effect semiconductor device |
US4546366A (en) * | 1978-04-24 | 1985-10-08 | Buchanan Bobby L | Polysilicon/silicon junction field effect transistors and integrated circuits (POSFET) |
US4279069A (en) * | 1979-02-21 | 1981-07-21 | Rockwell International Corporation | Fabrication of a nonvolatile memory array device |
JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
US4296428A (en) * | 1979-06-28 | 1981-10-20 | Rockwell International Corporation | Merged field effect transistor circuit and fabrication process |
IT1131790B (it) * | 1979-08-20 | 1986-06-25 | Rca Corp | Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita' |
US4242156A (en) * | 1979-10-15 | 1980-12-30 | Rockwell International Corporation | Method of fabricating an SOS island edge passivation structure |
JPS5842269A (ja) * | 1981-09-05 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Mis型可変抵抗器 |
US4418470A (en) * | 1981-10-21 | 1983-12-06 | General Electric Company | Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits |
US5111260A (en) * | 1983-06-17 | 1992-05-05 | Texax Instruments Incorporated | Polysilicon FETs |
US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
US5801396A (en) * | 1989-01-18 | 1998-09-01 | Stmicroelectronics, Inc. | Inverted field-effect device with polycrystalline silicon/germanium channel |
US5770892A (en) * | 1989-01-18 | 1998-06-23 | Sgs-Thomson Microelectronics, Inc. | Field effect device with polycrystalline silicon channel |
US5028564A (en) * | 1989-04-27 | 1991-07-02 | Chang Chen Chi P | Edge doping processes for mesa structures in SOS and SOI devices |
JPH04226079A (ja) * | 1990-04-17 | 1992-08-14 | Canon Inc | 半導体装置及びその製造方法及びそれを有する電子回路装置 |
US6140684A (en) * | 1997-06-24 | 2000-10-31 | Stmicroelectronic, Inc. | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers |
KR100491141B1 (ko) * | 2001-03-02 | 2005-05-24 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법과 이를 이용한 액티브매트릭스형 표시소자 및 그의 제조방법 |
US6911379B2 (en) * | 2003-03-05 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming strained silicon on insulator substrate |
US6949451B2 (en) * | 2003-03-10 | 2005-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI chip with recess-resistant buried insulator and method of manufacturing the same |
US6902962B2 (en) * | 2003-04-04 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-on-insulator chip with multiple crystal orientations |
US6864149B2 (en) * | 2003-05-09 | 2005-03-08 | Taiwan Semiconductor Manufacturing Company | SOI chip with mesa isolation and recess resistant regions |
US6902965B2 (en) * | 2003-10-31 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained silicon structure |
TWI474305B (zh) * | 2008-07-31 | 2015-02-21 | Sitronix Technology Corp | The polarity switching structure of point conversion system |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
GB1392599A (en) * | 1971-07-28 | 1975-04-30 | Mullard Ltd | Semiconductor memory elements |
US3781831A (en) * | 1972-06-30 | 1973-12-25 | Gen Electric | Read only memory utilizing floating gate transistors and method of programming |
JPS5036087A (xx) * | 1973-07-13 | 1975-04-04 |
-
1975
- 1975-03-18 CA CA222,387A patent/CA1040321A/en not_active Expired
- 1975-05-22 GB GB22307/75A patent/GB1505105A/en not_active Expired
- 1975-07-16 AU AU83097/75A patent/AU498134B2/en not_active Expired
- 1975-07-17 DE DE19752559729 patent/DE2559729A1/de active Pending
- 1975-07-17 DE DE19752531927 patent/DE2531927A1/de active Pending
- 1975-07-22 BE BE158505A patent/BE831612A/xx unknown
- 1975-07-23 JP JP50090702A patent/JPS5140086A/ja active Pending
-
1976
- 1976-11-18 US US05/742,852 patent/US4072974A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5140086A (xx) | 1976-04-03 |
AU8309775A (en) | 1977-01-20 |
CA1040321A (en) | 1978-10-10 |
GB1505105A (en) | 1978-03-22 |
US4072974A (en) | 1978-02-07 |
DE2559729A1 (de) | 1977-08-25 |
AU498134B2 (en) | 1979-02-15 |
DE2531927A1 (de) | 1976-02-05 |
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