BE817199A - METHOD OF MANUFACTURING A SCHOTTKY DIODE AND A DIODE MANUFACTURED ACCORDING TO SUCH A PROCESS - Google Patents
METHOD OF MANUFACTURING A SCHOTTKY DIODE AND A DIODE MANUFACTURED ACCORDING TO SUCH A PROCESSInfo
- Publication number
- BE817199A BE817199A BE146109A BE146169A BE817199A BE 817199 A BE817199 A BE 817199A BE 146109 A BE146109 A BE 146109A BE 146169 A BE146169 A BE 146169A BE 817199 A BE817199 A BE 817199A
- Authority
- BE
- Belgium
- Prior art keywords
- diode
- manufacturing
- manufactured according
- schottky diode
- schottky
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7324390A FR2329172A5 (en) | 1973-07-03 | 1973-07-03 | Schottky diode with high avalanche voltage - using layer of silica followed by alumina, and a mixed acid etchant |
Publications (1)
Publication Number | Publication Date |
---|---|
BE817199A true BE817199A (en) | 1975-01-03 |
Family
ID=9121987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE146109A BE817199A (en) | 1973-07-03 | 1974-07-03 | METHOD OF MANUFACTURING A SCHOTTKY DIODE AND A DIODE MANUFACTURED ACCORDING TO SUCH A PROCESS |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE817199A (en) |
DE (1) | DE2432008A1 (en) |
FR (1) | FR2329172A5 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5254369A (en) * | 1975-10-29 | 1977-05-02 | Mitsubishi Electric Corp | Schottky barrier semiconductor device |
-
1973
- 1973-07-03 FR FR7324390A patent/FR2329172A5/en not_active Expired
-
1974
- 1974-07-03 DE DE19742432008 patent/DE2432008A1/en active Pending
- 1974-07-03 BE BE146109A patent/BE817199A/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2329172A5 (en) | 1977-05-20 |
DE2432008A1 (en) | 1975-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2325186A1 (en) | TRANSISTOR MOS MANUFACTURING PROCESS AND RESULTING TRANSISTOR STRUCTURE | |
BE816561A (en) | PROCESS FOR MANUFACTURING SYNTHETIC WOOD | |
BE777902A (en) | METHOD OF MANUFACTURING A NON-TEXTILE STRUCTURE | |
BE814281A (en) | PROCESS FOR THE MANUFACTURE OF A MULTIPLICITY OF SEMICONDUCTOR MICROPLATELETS | |
BE821565A (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | |
FR2299662A1 (en) | ELECTRO-OPTICAL SWITCH AND METHOD OF MANUFACTURING SUCH A SWITCH | |
BE817679A (en) | PROCESS FOR MANUFACTURING POLYLACTONS DERIVED FROM POLY-ALPHA- HYDROXYACRYLIC ACIDS | |
BE789094A (en) | METHOD OF MANUFACTURING A FRICTION WELDED ARTICLE | |
BE777349A (en) | AMMONIUM DIURANATE MANUFACTURING PROCESS | |
FR2335040A1 (en) | METHOD FOR DIFFUSION OF IMPURITIES IN A SEMICONDUCTOR | |
BE780893A (en) | METHOD OF MANUFACTURING AN ELECTRODE | |
BE777392A (en) | MANUFACTURING PROCESS OF A SEMICONDUCTOR COMPONENT | |
BE817199A (en) | METHOD OF MANUFACTURING A SCHOTTKY DIODE AND A DIODE MANUFACTURED ACCORDING TO SUCH A PROCESS | |
BE812871A (en) | PROCESS FOR MANUFACTURING A CATALYST | |
FR2292696A1 (en) | AMINOCOMPOSES MANUFACTURING PROCESS | |
BE820634A (en) | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR LUMINESCENCE DIODE | |
IT1033509B (en) | METHOD OF MANUFACTURING A DARK PRODUCT | |
BE828781A (en) | PROCESS FOR THE PRODUCTION OF A COKE FOR ELECTRODES AND ELECTRODES MADE THANKS TO A SUCH COKE | |
BE821144A (en) | PROCESS FOR MANUFACTURING AN APPETIZER SUCCEDANE | |
BE816353R (en) | METHOD OF MANUFACTURING AN INDUCTIVE COMPONENT | |
BE829113A (en) | PROCESS FOR MANUFACTURING HEXAMETHYLENEIMINE | |
BE792124A (en) | STEEL MANUFACTURING PROCESS | |
BE816029A (en) | ALPHA-6-DESOXY-5-OXYTETRACYCLINE MANUFACTURING PROCESS | |
CH549296A (en) | METHOD OF MANUFACTURING A SUPRACONDUCTOR. | |
FR2286503A1 (en) | MANUFACTURING PROCESS OF A POWER TRANSISTOR |