BE785397A - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Google Patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Info

Publication number
BE785397A
BE785397A BE785397A BE785397A BE785397A BE 785397 A BE785397 A BE 785397A BE 785397 A BE785397 A BE 785397A BE 785397 A BE785397 A BE 785397A BE 785397 A BE785397 A BE 785397A
Authority
BE
Belgium
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
BE785397A
Other languages
French (fr)
Inventor
A G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE785397A publication Critical patent/BE785397A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE785397A 1971-06-25 1972-06-23 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE BE785397A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15681371A 1971-06-25 1971-06-25

Publications (1)

Publication Number Publication Date
BE785397A true BE785397A (en) 1972-10-16

Family

ID=22561196

Family Applications (1)

Application Number Title Priority Date Filing Date
BE785397A BE785397A (en) 1971-06-25 1972-06-23 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Country Status (7)

Country Link
BE (1) BE785397A (en)
CA (1) CA968468A (en)
DE (1) DE2230172B2 (en)
FR (1) FR2143418B1 (en)
GB (1) GB1363588A (en)
IT (1) IT956761B (en)
SE (1) SE383940B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US4102733A (en) * 1977-04-29 1978-07-25 International Business Machines Corporation Two and three mask process for IGFET fabrication
FR2417853A1 (en) * 1978-02-17 1979-09-14 Thomson Csf PROCESS FOR MAKING A MOS AND TRANSISTOR TYPE TRANSISTOR MADE ACCORDING TO THIS PROCEDURE

Also Published As

Publication number Publication date
IT956761B (en) 1973-10-10
SE383940B (en) 1976-04-05
FR2143418A1 (en) 1973-02-02
DE2230172A1 (en) 1972-12-28
FR2143418B1 (en) 1978-03-03
GB1363588A (en) 1974-08-14
DE2230172B2 (en) 1975-09-25
CA968468A (en) 1975-05-27

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