BE766750A - SEMICONDUCTOR CRYSTAL DRAWING METHODS - Google Patents

SEMICONDUCTOR CRYSTAL DRAWING METHODS

Info

Publication number
BE766750A
BE766750A BE766750A BE766750A BE766750A BE 766750 A BE766750 A BE 766750A BE 766750 A BE766750 A BE 766750A BE 766750 A BE766750 A BE 766750A BE 766750 A BE766750 A BE 766750A
Authority
BE
Belgium
Prior art keywords
semiconductor crystal
drawing methods
crystal drawing
methods
semiconductor
Prior art date
Application number
BE766750A
Other languages
French (fr)
Inventor
M E Weiner
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE766750A publication Critical patent/BE766750A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00Single-crystal growth under a protective fluid
    • C30B27/02Single-crystal growth under a protective fluid by pulling from a melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/06Gettering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE766750A 1970-05-11 1971-05-05 SEMICONDUCTOR CRYSTAL DRAWING METHODS BE766750A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3636770A 1970-05-11 1970-05-11

Publications (1)

Publication Number Publication Date
BE766750A true BE766750A (en) 1971-10-01

Family

ID=21888223

Family Applications (1)

Application Number Title Priority Date Filing Date
BE766750A BE766750A (en) 1970-05-11 1971-05-05 SEMICONDUCTOR CRYSTAL DRAWING METHODS

Country Status (9)

Country Link
US (1) US3647389A (en)
JP (1) JPS5026422B1 (en)
BE (1) BE766750A (en)
CA (1) CA952413A (en)
CH (1) CH569514A5 (en)
DE (1) DE2122192C3 (en)
FR (1) FR2088484B1 (en)
GB (1) GB1311048A (en)
IT (1) IT942100B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS6024078B2 (en) * 1977-09-05 1985-06-11 株式会社東芝 Manufacturing equipment for Group 3-5 compound semiconductor single crystals
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
JPS5914440B2 (en) * 1981-09-18 1984-04-04 住友電気工業株式会社 Method for doping boron into CaAs single crystal
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal
JPS59232995A (en) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd Cooling method of pulled up single crystal
EP0139157B1 (en) * 1983-08-31 1988-07-06 Research Development Corporation of Japan Apparatus for growing single crystals of dissociative compounds
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4824520A (en) * 1987-03-19 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated crystal growth
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors
KR20110093856A (en) * 2008-11-07 2011-08-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals

Also Published As

Publication number Publication date
FR2088484A1 (en) 1972-01-07
GB1311048A (en) 1973-03-21
DE2122192A1 (en) 1971-11-25
IT942100B (en) 1973-03-20
CA952413A (en) 1974-08-06
JPS5026422B1 (en) 1975-09-01
FR2088484B1 (en) 1976-04-16
US3647389A (en) 1972-03-07
DE2122192B2 (en) 1973-10-18
CH569514A5 (en) 1975-11-28
DE2122192C3 (en) 1974-06-06

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