BE757837A - HETEROJUNCTION PHOTODETECTOR CAN OPERATE IN AVALANCHE REGIME - Google Patents

HETEROJUNCTION PHOTODETECTOR CAN OPERATE IN AVALANCHE REGIME

Info

Publication number
BE757837A
BE757837A BE757837DA BE757837A BE 757837 A BE757837 A BE 757837A BE 757837D A BE757837D A BE 757837DA BE 757837 A BE757837 A BE 757837A
Authority
BE
Belgium
Prior art keywords
operate
heterojunction photodetector
avalanche regime
avalanche
regime
Prior art date
Application number
Other languages
French (fr)
Original Assignee
Comp Generale Electricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE757837A publication Critical patent/BE757837A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
BE757837D 1969-10-24 HETEROJUNCTION PHOTODETECTOR CAN OPERATE IN AVALANCHE REGIME BE757837A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6936585A FR2063639A5 (en) 1969-10-24 1969-10-24

Publications (1)

Publication Number Publication Date
BE757837A true BE757837A (en) 1971-04-22

Family

ID=9042035

Family Applications (1)

Application Number Title Priority Date Filing Date
BE757837D BE757837A (en) 1969-10-24 HETEROJUNCTION PHOTODETECTOR CAN OPERATE IN AVALANCHE REGIME

Country Status (4)

Country Link
BE (1) BE757837A (en)
DE (1) DE2052140A1 (en)
FR (1) FR2063639A5 (en)
NL (1) NL7015443A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2078440B (en) * 1980-03-31 1984-04-18 Nippon Telegraph & Telephone An optoelectronic switch

Also Published As

Publication number Publication date
DE2052140A1 (en) 1971-04-29
NL7015443A (en) 1971-04-27
FR2063639A5 (en) 1971-07-09

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