BE756139A - INTEGRATED intermediate circuit for coupling a circuit commandea low output impedance to a load impedance high input - Google Patents

INTEGRATED intermediate circuit for coupling a circuit commandea low output impedance to a load impedance high input

Info

Publication number
BE756139A
BE756139A BE756139DA BE756139A BE 756139 A BE756139 A BE 756139A BE 756139D A BE756139D A BE 756139DA BE 756139 A BE756139 A BE 756139A
Authority
BE
Belgium
Prior art keywords
circuit
commandea
coupling
low output
high input
Prior art date
Application number
Other languages
French (fr)
Inventor
H C Lee
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Priority to US85807369A priority Critical
Publication of BE756139A publication Critical patent/BE756139A/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34Dc amplifiers in which all stages are dc-coupled
    • H03F3/343Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/345Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/017509Interface arrangements
    • H03K19/017518Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
BE756139D 1969-09-15 INTEGRATED intermediate circuit for coupling a circuit commandea low output impedance to a load impedance high input BE756139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US85807369A true 1969-09-15 1969-09-15

Publications (1)

Publication Number Publication Date
BE756139A true BE756139A (en) 1971-02-15

Family

ID=25327415

Family Applications (1)

Application Number Title Priority Date Filing Date
BE756139D BE756139A (en) 1969-09-15 INTEGRATED intermediate circuit for coupling a circuit commandea low output impedance to a load impedance high input

Country Status (12)

Country Link
US (1) US3639787A (en)
JP (1) JPS493312B1 (en)
AT (1) AT324424B (en)
BE (1) BE756139A (en)
DE (1) DE2045618A1 (en)
ES (1) ES383456A1 (en)
FR (1) FR2061722B1 (en)
GB (1) GB1325882A (en)
MY (1) MY7400215A (en)
NL (1) NL7013553A (en)
SE (1) SE352987B (en)
ZA (1) ZA7006259B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039606C3 (en) * 1970-08-10 1980-11-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt
US4035662A (en) * 1970-11-02 1977-07-12 Texas Instruments Incorporated Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits
NL7107040A (en) * 1971-05-22 1972-11-24
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
JPS547181Y2 (en) * 1973-07-06 1979-04-04
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5648983B2 (en) * 1974-05-10 1981-11-19
JPS5718710B2 (en) * 1974-05-10 1982-04-17
DE2539967C2 (en) * 1975-09-02 1984-06-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
IT1073440B (en) * 1975-09-22 1985-04-17 Seiko Instr & Electronics Circuit voltage booster made mos-fet
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4038567A (en) * 1976-03-22 1977-07-26 International Business Machines Corporation Memory input signal buffer circuit
US4891533A (en) * 1984-02-17 1990-01-02 Analog Devices, Incorporated MOS-cascoded bipolar current sources in non-epitaxial structure
US5103281A (en) * 1984-02-17 1992-04-07 Holloway Peter R MOS-cascoded bipolar current sources in non-epitaxial structure
KR920007535B1 (en) * 1990-05-23 1992-09-05 김광호 Semconductor integrated circuit having a test circuit
DE102013217398A1 (en) * 2013-09-02 2015-03-05 Conti Temic Microelectronic Gmbh Electronic multi-channel switching device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (en) * 1961-09-08
NL293292A (en) * 1962-06-11
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3427445A (en) * 1965-12-27 1969-02-11 Ibm Full adder using field effect transistor of the insulated gate type
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration
US3390273A (en) * 1966-08-08 1968-06-25 Fairchild Camera Instr Co Electronic shutter with gating and storage features

Also Published As

Publication number Publication date
FR2061722B1 (en) 1976-10-29
DE2045618A1 (en) 1971-03-25
NL7013553A (en) 1971-03-17
GB1325882A (en) 1973-08-08
ZA7006259B (en) 1971-06-30
US3639787A (en) 1972-02-01
BE756139A1 (en)
FR2061722A1 (en) 1971-06-25
SE352987B (en) 1973-01-15
ES383456A1 (en) 1973-02-16
JPS493312B1 (en) 1974-01-25
AT324424B (en) 1975-08-25
MY7400215A (en) 1974-12-31

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