BE748377A - BAR DEVELOPMENT PROCESS - Google Patents

BAR DEVELOPMENT PROCESS

Info

Publication number
BE748377A
BE748377A BE748377DA BE748377A BE 748377 A BE748377 A BE 748377A BE 748377D A BE748377D A BE 748377DA BE 748377 A BE748377 A BE 748377A
Authority
BE
Belgium
Prior art keywords
development process
bar development
bar
development
Prior art date
Application number
Other languages
French (fr)
Inventor
T F Ciszek
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of BE748377A publication Critical patent/BE748377A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/16Heating of the melt or the crystallised materials by irradiation or electric discharge
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE748377D 1969-04-03 1970-04-02 BAR DEVELOPMENT PROCESS BE748377A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81326769A 1969-04-03 1969-04-03

Publications (1)

Publication Number Publication Date
BE748377A true BE748377A (en) 1970-10-02

Family

ID=25211930

Family Applications (1)

Application Number Title Priority Date Filing Date
BE748377D BE748377A (en) 1969-04-03 1970-04-02 BAR DEVELOPMENT PROCESS

Country Status (7)

Country Link
US (1) US3627500A (en)
JP (1) JPS4833876B1 (en)
BE (1) BE748377A (en)
DE (1) DE2016101C3 (en)
FR (1) FR2038216B1 (en)
GB (1) GB1249537A (en)
NL (1) NL7004740A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5094103A (en) * 1973-12-21 1975-07-26
DE2649201C2 (en) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Method for producing single-crystal semiconductor material ribbons by perpendicular drawing from a melt film using a molding member
DE2649223C2 (en) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Process for the production of single-crystal semiconductor material ribbons by perpendicular drawing from a melt film
JPS5420105A (en) * 1977-07-13 1979-02-15 Totsuto Shiyouji Yuugen Production of leather article with backing material
JPS5470401A (en) * 1977-11-12 1979-06-06 Nakatora Kk Multilevel patterning on leather
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPH0412083A (en) * 1990-04-27 1992-01-16 Osaka Titanium Co Ltd Production of silicon single crystal
DE4204777A1 (en) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Zonal single crystal growth with increased temp. gradient control - uses heat screens and sepd. heater elements to control and alter the solid-liq. interface position
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
DE19638563C2 (en) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Method of pulling single crystals
US20040255442A1 (en) * 2003-06-19 2004-12-23 Mcdiarmid James Methods and apparatus for processing workpieces
CN112058596B (en) * 2020-09-14 2022-12-02 河源市璐悦自动化设备有限公司 Uniform gluing process for large-size LCD optical glass

Also Published As

Publication number Publication date
FR2038216B1 (en) 1974-12-06
NL7004740A (en) 1970-10-06
JPS4833876B1 (en) 1973-10-17
DE2016101A1 (en) 1970-10-08
DE2016101B2 (en) 1973-04-26
DE2016101C3 (en) 1973-11-22
US3627500A (en) 1971-12-14
GB1249537A (en) 1971-10-13
FR2038216A1 (en) 1971-01-08

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