BE739402A - - Google Patents
Info
- Publication number
- BE739402A BE739402A BE739402DA BE739402A BE 739402 A BE739402 A BE 739402A BE 739402D A BE739402D A BE 739402DA BE 739402 A BE739402 A BE 739402A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/98—Utilizing process equivalents or options
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6813833A NL6813833A (en:Method) | 1968-09-27 | 1968-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE739402A true BE739402A (en:Method) | 1970-03-25 |
Family
ID=19804768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE739402D BE739402A (en:Method) | 1968-09-27 | 1969-09-25 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3602781A (en:Method) |
| BE (1) | BE739402A (en:Method) |
| CH (1) | CH500594A (en:Method) |
| DE (1) | DE1946302A1 (en:Method) |
| FR (1) | FR2022202A1 (en:Method) |
| GB (1) | GB1288578A (en:Method) |
| NL (1) | NL6813833A (en:Method) |
| SE (1) | SE362541B (en:Method) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH519251A (de) * | 1970-07-01 | 1972-02-15 | Ibm | Integrierte Halbleiterschaltung zur Speicherung von Daten |
| FR2144574B1 (en:Method) * | 1971-07-06 | 1976-09-17 | Thomson Csf | |
| DE2335333B1 (de) * | 1973-07-11 | 1975-01-16 | Siemens Ag | Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik |
| JPS5410228B2 (en:Method) * | 1973-08-20 | 1979-05-02 | ||
| US4075038A (en) * | 1973-10-30 | 1978-02-21 | General Electric Company | Deep diode devices and method and apparatus |
| US3943555A (en) * | 1974-05-02 | 1976-03-09 | Rca Corporation | SOS Bipolar transistor |
| US3925105A (en) * | 1974-07-02 | 1975-12-09 | Texas Instruments Inc | Process for fabricating integrated circuits utilizing ion implantation |
| US3982269A (en) * | 1974-11-22 | 1976-09-21 | General Electric Company | Semiconductor devices and method, including TGZM, of making same |
| US4127860A (en) * | 1977-04-18 | 1978-11-28 | Rca Corporation | Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact |
| US4633282A (en) * | 1982-10-04 | 1986-12-30 | Rockwell International Corporation | Metal-semiconductor field-effect transistor with a partial p-type drain |
| JPS6173345A (ja) * | 1984-09-19 | 1986-04-15 | Toshiba Corp | 半導体装置 |
| DE10202479A1 (de) * | 2002-01-23 | 2003-08-07 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes |
| KR101896332B1 (ko) * | 2016-12-13 | 2018-09-07 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| US12290292B2 (en) | 2021-08-10 | 2025-05-06 | Rtg Scientific, Llc | Bone fixation devices, systems, methods, and instruments |
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1968
- 1968-09-27 NL NL6813833A patent/NL6813833A/xx unknown
-
1969
- 1969-09-12 DE DE19691946302 patent/DE1946302A1/de not_active Withdrawn
- 1969-09-24 CH CH1438669A patent/CH500594A/de not_active IP Right Cessation
- 1969-09-24 GB GB1288578D patent/GB1288578A/en not_active Expired
- 1969-09-24 SE SE13150/69A patent/SE362541B/xx unknown
- 1969-09-25 BE BE739402D patent/BE739402A/xx unknown
- 1969-09-26 US US861252A patent/US3602781A/en not_active Expired - Lifetime
- 1969-09-26 FR FR6932985A patent/FR2022202A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CH500594A (de) | 1970-12-15 |
| SE362541B (en:Method) | 1973-12-10 |
| GB1288578A (en:Method) | 1972-09-13 |
| DE1946302A1 (de) | 1970-04-16 |
| FR2022202A1 (en:Method) | 1970-07-31 |
| NL6813833A (en:Method) | 1970-04-01 |
| US3602781A (en) | 1971-08-31 |