BE735304A - - Google Patents

Info

Publication number
BE735304A
BE735304A BE735304DA BE735304A BE 735304 A BE735304 A BE 735304A BE 735304D A BE735304D A BE 735304DA BE 735304 A BE735304 A BE 735304A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE735304A publication Critical patent/BE735304A/xx

Links

Classifications

    • H10W74/43—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/662—
    • H10P14/6682—
    • H10P14/69433—
    • H10W74/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
BE735304D 1968-06-28 1969-06-27 BE735304A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74096768A 1968-06-28 1968-06-28
US4177770A 1970-06-05 1970-06-05

Publications (1)

Publication Number Publication Date
BE735304A true BE735304A (enExample) 1969-12-29

Family

ID=26718503

Family Applications (1)

Application Number Title Priority Date Filing Date
BE735304D BE735304A (enExample) 1968-06-28 1969-06-27

Country Status (3)

Country Link
US (1) US3696276A (enExample)
BE (1) BE735304A (enExample)
FR (1) FR2014382B1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
US4003071A (en) * 1971-09-18 1977-01-11 Fujitsu Ltd. Method of manufacturing an insulated gate field effect transistor
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
US3867204A (en) * 1973-03-19 1975-02-18 Motorola Inc Manufacture of semiconductor devices
US3911465A (en) * 1973-08-02 1975-10-07 Norman A Foss MOS photodiode
US3880676A (en) * 1973-10-29 1975-04-29 Rca Corp Method of making a semiconductor device
US3933541A (en) * 1974-01-22 1976-01-20 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor planar device
US3986903A (en) * 1974-03-13 1976-10-19 Intel Corporation Mosfet transistor and method of fabrication
IN145547B (enExample) * 1976-01-12 1978-11-04 Rca Corp
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
US4096509A (en) * 1976-07-22 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force MNOS memory transistor having a redeposited silicon nitride gate dielectric
US4205330A (en) * 1977-04-01 1980-05-27 National Semiconductor Corporation Method of manufacturing a low voltage n-channel MOSFET device
US4242691A (en) * 1978-09-18 1980-12-30 Mitsubishi Denki Kabushiki Kaisha MOS Semiconductor device
US4247861A (en) * 1979-03-09 1981-01-27 Rca Corporation High performance electrically alterable read-only memory (EAROM)
US4826779A (en) * 1986-10-24 1989-05-02 Teledyne Industries, Inc. Integrated capacitor and method of fabricating same
JP2635809B2 (ja) * 1990-09-12 1997-07-30 株式会社東芝 半導体装置及びその製造方法
US5187113A (en) * 1991-05-17 1993-02-16 United Technologies Corporation Field oxide termination and gate oxide formation
US5648282A (en) * 1992-06-26 1997-07-15 Matsushita Electronics Corporation Autodoping prevention and oxide layer formation apparatus
US5435987A (en) * 1993-07-22 1995-07-25 Pq Corporation Process for preparing ammonium zeolites of low alkali metal content
TW461118B (en) * 2000-12-15 2001-10-21 Ind Tech Res Inst Thin film transistor with increased device reliability and production process thereof
KR102309747B1 (ko) * 2013-08-30 2021-10-08 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 InGaAlN계 반도체 소자

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3597667A (en) * 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
US3446659A (en) * 1966-09-16 1969-05-27 Texas Instruments Inc Apparatus and process for growing noncontaminated thermal oxide on silicon

Also Published As

Publication number Publication date
US3696276A (en) 1972-10-03
FR2014382A1 (enExample) 1970-04-17
FR2014382B1 (enExample) 1974-03-15

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