BE707510A - - Google Patents
Info
- Publication number
- BE707510A BE707510A BE707510DA BE707510A BE 707510 A BE707510 A BE 707510A BE 707510D A BE707510D A BE 707510DA BE 707510 A BE707510 A BE 707510A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/366—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10W74/40—
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- H10W74/43—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60911367A | 1967-01-13 | 1967-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE707510A true BE707510A (en:Method) | 1968-04-16 |
Family
ID=24439392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE707510D BE707510A (en:Method) | 1967-01-13 | 1967-12-04 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3569799A (en:Method) |
| BE (1) | BE707510A (en:Method) |
| CH (1) | CH479164A (en:Method) |
| DE (1) | DE1639259C3 (en:Method) |
| FR (1) | FR1548851A (en:Method) |
| GB (1) | GB1141980A (en:Method) |
| NL (1) | NL162252C (en:Method) |
| SE (1) | SE365654B (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831186A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode device employing barrier emitters |
| US3831185A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode |
| JPS5462787A (en) * | 1977-10-28 | 1979-05-21 | Agency Of Ind Science & Technol | Semiconductor device and integrated circuit of the same |
| JPS5681972A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Mos type field effect transistor |
| DE3040872A1 (de) * | 1980-10-30 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Transistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL224962A (en:Method) * | 1958-02-15 | |||
| US3207962A (en) * | 1959-01-02 | 1965-09-21 | Transitron Electronic Corp | Semiconductor device having turn on and turn off gain |
| US3060327A (en) * | 1959-07-02 | 1962-10-23 | Bell Telephone Labor Inc | Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation |
| NL265382A (en:Method) * | 1960-03-08 | |||
| US3045129A (en) * | 1960-12-08 | 1962-07-17 | Bell Telephone Labor Inc | Semiconductor tunnel device |
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1967
- 1967-01-13 US US609113A patent/US3569799A/en not_active Expired - Lifetime
- 1967-12-04 BE BE707510D patent/BE707510A/xx unknown
- 1967-12-07 FR FR1548851D patent/FR1548851A/fr not_active Expired
- 1967-12-20 GB GB57988/67A patent/GB1141980A/en not_active Expired
-
1968
- 1968-01-03 DE DE1639259A patent/DE1639259C3/de not_active Expired
- 1968-01-08 CH CH20768A patent/CH479164A/de not_active IP Right Cessation
- 1968-01-08 NL NL6800243.A patent/NL162252C/xx active
- 1968-01-12 SE SE00412/68A patent/SE365654B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6800243A (en:Method) | 1968-07-15 |
| DE1639259B2 (de) | 1978-02-23 |
| US3569799A (en) | 1971-03-09 |
| DE1639259C3 (de) | 1978-10-05 |
| SE365654B (en:Method) | 1974-03-25 |
| FR1548851A (en:Method) | 1968-12-06 |
| CH479164A (de) | 1969-09-30 |
| DE1639259A1 (de) | 1971-02-04 |
| NL162252C (nl) | 1980-04-15 |
| NL162252B (nl) | 1979-11-15 |
| GB1141980A (en) | 1969-02-05 |