BE676467A - - Google Patents

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Publication number
BE676467A
BE676467A BE676467DA BE676467A BE 676467 A BE676467 A BE 676467A BE 676467D A BE676467D A BE 676467DA BE 676467 A BE676467 A BE 676467A
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BE
Belgium
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Publication of BE676467A publication Critical patent/BE676467A/xx

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    • HELECTRICITY
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
BE676467D 1965-02-16 1966-02-15 BE676467A (US06338842-20020115-C00009.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ27519A DE1283969B (de) 1965-02-16 1965-02-16 Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
BE676467A true BE676467A (US06338842-20020115-C00009.png) 1966-08-16

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ID=7202990

Family Applications (1)

Application Number Title Priority Date Filing Date
BE676467D BE676467A (US06338842-20020115-C00009.png) 1965-02-16 1966-02-15

Country Status (6)

Country Link
US (1) US3471752A (US06338842-20020115-C00009.png)
BE (1) BE676467A (US06338842-20020115-C00009.png)
DE (1) DE1283969B (US06338842-20020115-C00009.png)
GB (1) GB1066200A (US06338842-20020115-C00009.png)
IE (1) IE29877L (US06338842-20020115-C00009.png)
NL (1) NL153722B (US06338842-20020115-C00009.png)

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JPS5631892B2 (US06338842-20020115-C00009.png) * 1972-04-27 1981-07-24
JPS49113555U (US06338842-20020115-C00009.png) * 1973-01-25 1974-09-27
US3814994A (en) * 1973-03-07 1974-06-04 Gen Motors Corp Four terminal power transistor
US4180414A (en) * 1978-07-10 1979-12-25 Optical Coating Laboratory, Inc. Concentrator solar cell array module
JPS5753947A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Transistor and electronic device containing it
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink

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NL98125C (US06338842-20020115-C00009.png) * 1954-08-26 1900-01-01
US2948835A (en) * 1958-10-21 1960-08-09 Texas Instruments Inc Transistor structure
US3020454A (en) * 1959-11-09 1962-02-06 Solid State Products Inc Sealing of electrical semiconductor devices
US3160798A (en) * 1959-12-07 1964-12-08 Gen Electric Semiconductor devices including means for securing the elements
BE638960A (US06338842-20020115-C00009.png) * 1962-10-23
CH440478A (de) * 1963-07-01 1967-07-31 Asea Ab Verfahren zum Herabsetzen der Durchlasspannung in einem gleichrichtenden Halbleiterkörper und Anordnung zur Ausführung des Verfahrens
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3283224A (en) * 1965-08-18 1966-11-01 Trw Semiconductors Inc Mold capping semiconductor device

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Publication number Publication date
NL6601886A (US06338842-20020115-C00009.png) 1966-08-17
US3471752A (en) 1969-10-07
NL153722B (nl) 1977-06-15
IE29877L (en) 1966-08-16
DE1283969B (de) 1968-11-28
GB1066200A (en) 1967-04-19

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