BE658787A - - Google Patents

Info

Publication number
BE658787A
BE658787A BE658787DA BE658787A BE 658787 A BE658787 A BE 658787A BE 658787D A BE658787D A BE 658787DA BE 658787 A BE658787 A BE 658787A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE658787A publication Critical patent/BE658787A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
BE658787D 1964-01-24 1965-01-25 BE658787A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US339978A US3363152A (en) 1964-01-24 1964-01-24 Semiconductor devices with low leakage current across junction

Publications (1)

Publication Number Publication Date
BE658787A true BE658787A (pt) 1965-05-17

Family

ID=23331382

Family Applications (1)

Application Number Title Priority Date Filing Date
BE658787D BE658787A (pt) 1964-01-24 1965-01-25

Country Status (5)

Country Link
US (1) US3363152A (pt)
BE (1) BE658787A (pt)
DE (1) DE1539070A1 (pt)
FR (1) FR1422498A (pt)
GB (1) GB1088795A (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
NL6609002A (pt) * 1966-06-29 1968-01-02
US3453504A (en) * 1966-08-11 1969-07-01 Siliconix Inc Unipolar transistor
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
US3911461A (en) * 1974-11-07 1975-10-07 Motorola Inc Semiconductor device with improved reverse transient capability
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
DE3333242C2 (de) * 1982-09-13 1995-08-17 Nat Semiconductor Corp Monolithisch integrierter Halbleiterschaltkreis
DE4428018A1 (de) * 1994-08-08 1996-02-15 Bayer Ag Verfahren zur Herstellung von aromatischen Aminen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588254A (en) * 1950-05-09 1952-03-04 Purdue Research Foundation Photoelectric and thermoelectric device utilizing semiconducting material
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
NL123575C (pt) * 1960-04-01
US3184657A (en) * 1962-01-05 1965-05-18 Fairchild Camera Instr Co Nested region transistor configuration
IT699934A (pt) * 1962-06-29

Also Published As

Publication number Publication date
FR1422498A (fr) 1965-12-24
GB1088795A (en) 1967-10-25
US3363152A (en) 1968-01-09
DE1539070A1 (de) 1969-05-14

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