BE657894A - - Google Patents
Info
- Publication number
- BE657894A BE657894A BE657894A BE657894A BE657894A BE 657894 A BE657894 A BE 657894A BE 657894 A BE657894 A BE 657894A BE 657894 A BE657894 A BE 657894A BE 657894 A BE657894 A BE 657894A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES88949A DE1224279B (de) | 1964-01-03 | 1964-01-03 | Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
BE657894A true BE657894A (US06653308-20031125-C00197.png) | 1965-07-05 |
Family
ID=7514777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE657894A BE657894A (US06653308-20031125-C00197.png) | 1964-01-03 | 1965-01-04 |
Country Status (7)
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1245335B (de) * | 1964-06-26 | 1967-07-27 | Siemens Ag | Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern |
US3607061A (en) * | 1968-06-26 | 1971-09-21 | Univ Case Western Reserve | Manufacture of synthetic diamonds |
US3630679A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
US3630678A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
US3615208A (en) * | 1969-02-06 | 1971-10-26 | John W Byron | Diamond growth process |
US4517220A (en) * | 1983-08-15 | 1985-05-14 | Motorola, Inc. | Deposition and diffusion source control means and method |
US4717596A (en) * | 1985-10-30 | 1988-01-05 | International Business Machines Corporation | Method for vacuum vapor deposition with improved mass flow control |
KR950007197B1 (ko) * | 1990-10-05 | 1995-07-03 | 후지쓰 가부시기가이샤 | 수증기의 공급장치 및 그 제어방법 |
US5832177A (en) * | 1990-10-05 | 1998-11-03 | Fujitsu Limited | Method for controlling apparatus for supplying steam for ashing process |
FR2719787B1 (fr) * | 1994-05-10 | 1996-06-14 | Air Liquide | Fabrication de mélanges de gaz à très basse teneurs. |
US6817381B2 (en) * | 1999-08-24 | 2004-11-16 | Tokyo Electron Limited | Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus |
US6473564B1 (en) * | 2000-01-07 | 2002-10-29 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of manufacturing thin organic film |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL131267C (US06653308-20031125-C00197.png) * | 1960-06-14 | 1900-01-01 | ||
US3173812A (en) * | 1961-02-27 | 1965-03-16 | Yardney International Corp | Deferred-action battery |
US3173802A (en) * | 1961-12-14 | 1965-03-16 | Bell Telephone Labor Inc | Process for controlling gas phase composition |
US3155621A (en) * | 1962-07-13 | 1964-11-03 | Plessey Co Ltd | Production of silicon with a predetermined impurity content |
US3318814A (en) * | 1962-07-24 | 1967-05-09 | Siemens Ag | Doped semiconductor process and products produced thereby |
-
1964
- 1964-01-03 DE DES88949A patent/DE1224279B/de active Pending
- 1964-12-21 NL NL6414906A patent/NL6414906A/xx unknown
- 1964-12-23 US US420638A patent/US3348984A/en not_active Expired - Lifetime
- 1964-12-30 CH CH1682864A patent/CH440230A/de unknown
- 1964-12-31 FR FR589A patent/FR1419372A/fr not_active Expired
-
1965
- 1965-01-01 GB GB90/65A patent/GB1041941A/en not_active Expired
- 1965-01-04 BE BE657894A patent/BE657894A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL6414906A (US06653308-20031125-C00197.png) | 1965-07-05 |
DE1224279B (de) | 1966-09-08 |
FR1419372A (fr) | 1965-11-26 |
GB1041941A (en) | 1966-09-07 |
US3348984A (en) | 1967-10-24 |
CH440230A (de) | 1967-07-31 |