BE657172A - - Google Patents

Info

Publication number
BE657172A
BE657172A BE657172DA BE657172A BE 657172 A BE657172 A BE 657172A BE 657172D A BE657172D A BE 657172DA BE 657172 A BE657172 A BE 657172A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE657172A publication Critical patent/BE657172A/xx

Links

Classifications

    • H01L31/10—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/222—Lithium-drift
    • H01L31/18—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
BE657172D 1964-01-14 1964-12-16 BE657172A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US337689A US3290179A (en) 1964-01-14 1964-01-14 Method and apparatus for determining drift depth of impurities in semiconductors

Publications (1)

Publication Number Publication Date
BE657172A true BE657172A (fr) 1965-04-16

Family

ID=23321588

Family Applications (1)

Application Number Title Priority Date Filing Date
BE657172D BE657172A (fr) 1964-01-14 1964-12-16

Country Status (3)

Country Link
US (1) US3290179A (fr)
BE (1) BE657172A (fr)
GB (1) GB1035858A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385776A (en) * 1965-06-11 1968-05-28 Nuclear Diodes Inc Process for alloying lithium to semi-conductor material
GB1174004A (en) * 1966-02-07 1969-12-10 Asahi Glass Co Ltd A Method of and Apparatus for Vertically Drawing Glass Ribbon
US3507036A (en) * 1968-01-15 1970-04-21 Ibm Test sites for monolithic circuits
US3612868A (en) * 1970-06-26 1971-10-12 Atomic Energy Commission High-sensitivity stimulated exoelectron emission radiation dosimeters
US4157497A (en) * 1978-01-05 1979-06-05 Rockwell International Corporation Qualification test of gallium arsenide
US4483637A (en) * 1982-06-29 1984-11-20 Moore Business Forms, Inc. Binder for business forms
US4788491A (en) * 1984-12-24 1988-11-29 Electron Transfer Technologies, Inc. Method of the measurement of interstitial atoms in alloys including the hydrogen content of solid hydrides, and of sorbed species on surface
US4950977A (en) * 1988-12-21 1990-08-21 At&T Bell Laboratories Method of measuring mobile ion concentration in semiconductor devices
US6680621B2 (en) * 2001-01-26 2004-01-20 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US6597193B2 (en) * 2001-01-26 2003-07-22 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current

Also Published As

Publication number Publication date
US3290179A (en) 1966-12-06
GB1035858A (en) 1966-07-13

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