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Publication of BE655871ApublicationCriticalpatent/BE655871A/xx
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/30—Modifications for providing a predetermined threshold before switching
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
H03K3/3525—Anode gate thyristors or programmable unijunction transistors