BE646510A - - Google Patents

Info

Publication number
BE646510A
BE646510A BE646510A BE646510A BE646510A BE 646510 A BE646510 A BE 646510A BE 646510 A BE646510 A BE 646510A BE 646510 A BE646510 A BE 646510A BE 646510 A BE646510 A BE 646510A
Authority
BE
Belgium
Application number
BE646510A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE646510A publication Critical patent/BE646510A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/01—Lens envelope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/04—Electric heat
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
BE646510A 1963-04-12 1964-04-13 BE646510A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US272676A US3258314A (en) 1963-04-12 1963-04-12 Method for interior zone melting of a crystalline rod

Publications (1)

Publication Number Publication Date
BE646510A true BE646510A (en) 1964-07-31

Family

ID=23040795

Family Applications (1)

Application Number Title Priority Date Filing Date
BE646510A BE646510A (en) 1963-04-12 1964-04-13

Country Status (2)

Country Link
US (1) US3258314A (en)
BE (1) BE646510A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109128A (en) * 1975-09-01 1978-08-22 Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the production of semiconductor rods of large diameter and device for making the same

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054815A (en) * 1963-01-31 1900-01-01
DE1249802B (en) * 1964-03-05
NL6402629A (en) * 1964-03-13 1965-09-14
NL6509041A (en) * 1964-07-16 1966-01-17
US3404966A (en) * 1964-09-04 1968-10-08 Northeru Electric Company Ltd Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible
DE1275996B (en) * 1965-07-10 1968-08-29 Siemens Ag Device for crucible-free zone melting
US3423189A (en) * 1966-01-13 1969-01-21 Bell Telephone Labor Inc Zone melting
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
US3876388A (en) * 1968-10-30 1975-04-08 Siemens Ag Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US3999950A (en) * 1971-01-07 1976-12-28 Siemens Aktiengesellschaft Apparatus for crystal growth in outer space
US4046617A (en) * 1975-09-05 1977-09-06 Nasa Method of crystallization
US4199397A (en) * 1976-02-09 1980-04-22 Motorola, Inc. Spontaneous growth of large crystal semiconductor material by controlled melt perturbation
CA1080562A (en) * 1977-02-10 1980-07-01 Frederick D. King Method of and apparatus for manufacturing an optical fibre with plasma activated deposition in a tube
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
DE102012213715A1 (en) * 2012-08-02 2014-02-06 Siltronic Ag An apparatus for producing a single crystal by crystallizing the single crystal at a melting zone
CN103255473B (en) * 2013-04-25 2016-06-29 浙江晶盛机电股份有限公司 A kind of assisted heating device for zone melting furnace and monocrystal rod heat preserving method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2743100A (en) * 1951-10-05 1956-04-24 Theodore Macklin Furnace for treatment of pulverized ores
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2839436A (en) * 1955-04-19 1958-06-17 Texas Instruments Inc Method and apparatus for growing semiconductor crystals
NL212548A (en) * 1956-11-28
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US3023091A (en) * 1959-03-02 1962-02-27 Raytheon Co Methods of heating and levitating molten material
NL244489A (en) * 1959-10-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109128A (en) * 1975-09-01 1978-08-22 Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the production of semiconductor rods of large diameter and device for making the same

Also Published As

Publication number Publication date
US3258314A (en) 1966-06-28

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