BE641153A - - Google Patents
Info
- Publication number
- BE641153A BE641153A BE641153DA BE641153A BE 641153 A BE641153 A BE 641153A BE 641153D A BE641153D A BE 641153DA BE 641153 A BE641153 A BE 641153A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US244075A US3312880A (en) | 1962-12-12 | 1962-12-12 | Four-layer semiconductor switching device having turn-on and turn-off gain |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE641153A true BE641153A (en:Method) | 1964-04-01 |
Family
ID=22921268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE641153D BE641153A (en:Method) | 1962-12-12 | 1963-12-12 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3312880A (en:Method) |
| BE (1) | BE641153A (en:Method) |
| GB (1) | GB1020097A (en:Method) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387192A (en) * | 1965-05-19 | 1968-06-04 | Irc Inc | Four layer planar semiconductor switch and method of making the same |
| US3480802A (en) * | 1966-11-16 | 1969-11-25 | Westinghouse Electric Corp | High power semiconductor control element and associated circuitry |
| US3943549A (en) * | 1972-03-15 | 1976-03-09 | Bbc Brown, Boveri & Company, Limited | Thyristor |
| JPS5248986A (en) * | 1975-10-17 | 1977-04-19 | Mitsubishi Electric Corp | Semiconductor temperature sensitive switch element |
| JPS584826B2 (ja) * | 1976-03-22 | 1983-01-27 | 株式会社東芝 | ゲ−ト・タ−ンオフ・サイリスタ |
| US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
| JPS61191071A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 伝導度変調型半導体装置及びその製造方法 |
| FR2579024B1 (fr) * | 1985-03-12 | 1987-05-15 | Silicium Semiconducteurs Ssc | Thyristor de protection sans gachette |
| US5539217A (en) * | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3220896A (en) * | 1961-07-17 | 1965-11-30 | Raytheon Co | Transistor |
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
-
1962
- 1962-12-12 US US244075A patent/US3312880A/en not_active Expired - Lifetime
-
1963
- 1963-12-05 GB GB48160/63D patent/GB1020097A/en not_active Expired
- 1963-12-12 BE BE641153D patent/BE641153A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1020097A (en) | 1966-02-16 |
| US3312880A (en) | 1967-04-04 |