BE639365A - - Google Patents
Info
- Publication number
- BE639365A BE639365A BE639365DA BE639365A BE 639365 A BE639365 A BE 639365A BE 639365D A BE639365D A BE 639365DA BE 639365 A BE639365 A BE 639365A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US234150A US3248670A (en) | 1962-10-30 | 1962-10-30 | Semiconductor laser with optical cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE639365A true BE639365A (US06650917-20031118-M00005.png) |
Family
ID=22880157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE639365D BE639365A (US06650917-20031118-M00005.png) | 1962-10-30 |
Country Status (6)
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3363195A (en) * | 1963-07-01 | 1968-01-09 | Bell Telephone Labor Inc | Junction diode maser |
| US3330991A (en) * | 1963-07-12 | 1967-07-11 | Raytheon Co | Non-thermionic electron emission devices |
| US3359509A (en) * | 1964-02-19 | 1967-12-19 | Gen Electric | Semiconductive junction laser with temperature compensation |
| US3300671A (en) * | 1964-03-10 | 1967-01-24 | Gen Electric | Surface-adjacent junction electroluminescent device |
| US3531735A (en) * | 1966-06-28 | 1970-09-29 | Gen Electric | Semiconductor laser having grooves to prevent radiation transverse to the optical axis |
| US3701047A (en) * | 1966-08-16 | 1972-10-24 | Rca Corp | Semiconductor laser devices utilizing light reflective metallic layers |
| US3522388A (en) * | 1966-11-30 | 1970-07-28 | Norton Research Corp | Electroluminescent diode light source having a permanent implanted opaque surface layer mask |
| US3522389A (en) * | 1966-12-06 | 1970-07-28 | Norton Research Corp | Masked film recording electroluminescent diode light source having a transparent filled mask aperture |
| US3526851A (en) * | 1967-07-10 | 1970-09-01 | Rca Corp | Filamentary structure injection laser having a very narrow active junction |
| DE1614846B2 (de) * | 1967-07-26 | 1976-09-23 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Halbleiterdiodenanordnung |
| US3824493A (en) * | 1972-09-05 | 1974-07-16 | Bell Telephone Labor Inc | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror |
| NL7312139A (US06650917-20031118-M00005.png) * | 1972-09-08 | 1974-03-12 | ||
| GB2175176A (en) * | 1985-05-10 | 1986-11-19 | Philips Electronic And Assaoci | Signal transmission arrangement, a transmitter and a receiver for such an arrangement and a communication system including such an arrangement |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2953730A (en) * | 1952-11-07 | 1960-09-20 | Rca Corp | High frequency semiconductor devices |
| NL251064A (US06650917-20031118-M00005.png) * | 1955-11-04 | |||
| US3039362A (en) * | 1958-05-09 | 1962-06-19 | Ca Nat Research Council | Narrow band interference filter |
| US3102201A (en) * | 1958-12-15 | 1963-08-27 | Rca Corp | Semiconductor device for generating modulated radiation |
| USRE25632E (en) * | 1960-01-11 | 1964-08-18 | Optical maser | |
| NL128040C (US06650917-20031118-M00005.png) * | 1960-10-07 |
-
0
- BE BE639365D patent/BE639365A/xx unknown
- NL NL299208D patent/NL299208A/xx unknown
-
1962
- 1962-10-30 US US234150A patent/US3248670A/en not_active Expired - Lifetime
-
1963
- 1963-10-25 DE DE1464711A patent/DE1464711C3/de not_active Expired
- 1963-10-30 GB GB42817/63A patent/GB995950A/en not_active Expired
- 1963-10-30 CH CH1335763A patent/CH414029A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1464711A1 (de) | 1969-05-14 |
| DE1464711C3 (de) | 1974-03-28 |
| GB995950A (en) | 1965-06-23 |
| NL299208A (US06650917-20031118-M00005.png) | |
| CH414029A (de) | 1966-05-31 |
| US3248670A (en) | 1966-04-26 |
| DE1464711B2 (de) | 1973-08-23 |
