BE631658A - - Google Patents

Info

Publication number
BE631658A
BE631658A BE631658DA BE631658A BE 631658 A BE631658 A BE 631658A BE 631658D A BE631658D A BE 631658DA BE 631658 A BE631658 A BE 631658A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE631658A publication Critical patent/BE631658A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10P14/24
    • H10P14/274
    • H10P14/2905
    • H10P14/3411
    • H10P14/3442
    • H10P14/3444
    • H10P14/6309
    • H10P14/6322
    • H10P14/6334
    • H10P14/6682
    • H10P14/69215
    • H10P50/242
    • H10P95/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
BE631658D 1962-06-11 BE631658A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20155662A 1962-06-11 1962-06-11

Publications (1)

Publication Number Publication Date
BE631658A true BE631658A (cg-RX-API-DMAC10.html)

Family

ID=22746310

Family Applications (1)

Application Number Title Priority Date Filing Date
BE631658D BE631658A (cg-RX-API-DMAC10.html) 1962-06-11

Country Status (4)

Country Link
BE (1) BE631658A (cg-RX-API-DMAC10.html)
DE (1) DE1521834B2 (cg-RX-API-DMAC10.html)
GB (1) GB1047942A (cg-RX-API-DMAC10.html)
NL (2) NL142525B (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2218567A (en) * 1988-05-13 1989-11-15 Philips Electronic Associated A method of forming an epitaxial layer of silicon
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法,半導体装置の製造装置,半導体レーザの製造方法,量子細線構造の製造方法,及び結晶成長方法
GB2299893B (en) * 1992-09-10 1997-01-22 Mitsubishi Electric Corp Method for producing a quantum wire structure
EP1001458A1 (en) * 1998-11-09 2000-05-17 STMicroelectronics S.r.l. Isotropic etching of silicon using hydrogen chloride

Also Published As

Publication number Publication date
DE1521834A1 (de) 1970-01-08
DE1521834B2 (de) 1971-10-07
NL293887A (cg-RX-API-DMAC10.html)
NL142525B (nl) 1974-06-17
GB1047942A (en) 1966-11-09

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