BE627302A - - Google Patents

Info

Publication number
BE627302A
BE627302A BE627302DA BE627302A BE 627302 A BE627302 A BE 627302A BE 627302D A BE627302D A BE 627302DA BE 627302 A BE627302 A BE 627302A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE627302A publication Critical patent/BE627302A/xx
Priority claimed from US167341A external-priority patent/US3200019A/en

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6334—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6923—
    • H10P32/14—
    • H10P32/141—
    • H10P32/171—
    • H10P32/174—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
BE627302D 1962-01-19 BE627302A (oth)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US167341A US3200019A (en) 1962-01-19 1962-01-19 Method for making a semiconductor device
US420523A US3340445A (en) 1962-01-19 1964-12-23 Semiconductor devices having modifier-containing surface oxide layer

Publications (1)

Publication Number Publication Date
BE627302A true BE627302A (oth)

Family

ID=26863069

Family Applications (1)

Application Number Title Priority Date Filing Date
BE627302D BE627302A (oth) 1962-01-19

Country Status (5)

Country Link
US (1) US3340445A (oth)
BE (1) BE627302A (oth)
DE (1) DE1444520B2 (oth)
GB (1) GB1013985A (oth)
NL (2) NL141709B (oth)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1014830A (en) * 1972-11-15 1977-08-02 Klaus C. Wiemer Method of forming doped dielectric layers utilizing reactive plasma deposition
DE3066027D1 (en) * 1979-12-17 1984-02-02 Hughes Aircraft Co Low temperature process for depositing oxide layers by photochemical vapor deposition
DE102008019402A1 (de) 2008-04-14 2009-10-15 Gebr. Schmid Gmbh & Co. Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
DE102009041546A1 (de) * 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE534505A (oth) * 1953-12-30
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US2989424A (en) * 1958-03-31 1961-06-20 Westinghouse Electric Corp Method of providing an oxide protective coating for semiconductors
US2899344A (en) * 1958-04-30 1959-08-11 Rinse in
US3001896A (en) * 1958-12-24 1961-09-26 Ibm Diffusion control in germanium
US3040218A (en) * 1959-03-10 1962-06-19 Hoffman Electronics Corp Constant current devices
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices

Also Published As

Publication number Publication date
DE1444520A1 (de) 1968-11-07
NL287925A (oth)
NL141709B (nl) 1974-03-15
US3340445A (en) 1967-09-05
DE1444520B2 (de) 1971-06-16
GB1013985A (en) 1965-12-22

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