BE625476A - - Google Patents

Info

Publication number
BE625476A
BE625476A BE625476DA BE625476A BE 625476 A BE625476 A BE 625476A BE 625476D A BE625476D A BE 625476DA BE 625476 A BE625476 A BE 625476A
Authority
BE
Belgium
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE625476A publication Critical patent/BE625476A/fr

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00Shaping glass in contact with the surface of a liquid
    • C03B18/02Forming sheets
    • C03B18/04Changing or regulating the dimensions of the molten glass ribbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/957Making metal-insulator-metal device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Control Of Charge By Means Of Generators (AREA)
BE625476D 1961-11-29 1962-11-29 BE625476A (US20080005853A1-20080110-C00027.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US155726A US3254276A (en) 1961-11-29 1961-11-29 Solid-state translating device with barrier-layers formed by thin metal and semiconductor material

Publications (1)

Publication Number Publication Date
BE625476A true BE625476A (US20080005853A1-20080110-C00027.png) 1963-03-15

Family

ID=47045249

Family Applications (1)

Application Number Title Priority Date Filing Date
BE625476D BE625476A (US20080005853A1-20080110-C00027.png) 1961-11-29 1962-11-29

Country Status (6)

Country Link
US (1) US3254276A (US20080005853A1-20080110-C00027.png)
BE (1) BE625476A (US20080005853A1-20080110-C00027.png)
ES (1) ES281118A1 (US20080005853A1-20080110-C00027.png)
FR (1) FR1343659A (US20080005853A1-20080110-C00027.png)
GB (1) GB1002267A (US20080005853A1-20080110-C00027.png)
NL (1) NL286122A (US20080005853A1-20080110-C00027.png)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1273698B (de) * 1964-01-08 1968-07-25 Telefunken Patent Halbleiteranordnung
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
DE1464880B2 (de) * 1964-05-05 1970-11-12 Danfoss A/S, Nordborg (Dänemark) Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen
US3368919A (en) * 1964-07-29 1968-02-13 Sylvania Electric Prod Composite protective coat for thin film devices
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3569801A (en) * 1969-06-02 1971-03-09 Gen Electric Thin film triodes and method of forming
US4818565A (en) * 1987-10-30 1989-04-04 Regents Of The University Of Minnesota Method to stabilize metal contacts on mercury-cadmium-telluride alloys
FR2754386B1 (fr) * 1996-10-03 1998-10-30 Commissariat Energie Atomique Structure comprenant une partie isolee dans un substrat massif et procede de realisation d'une telle structure
US20050072461A1 (en) * 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
US8586480B1 (en) * 2012-07-31 2013-11-19 Ixys Corporation Power MOSFET having selectively silvered pads for clip and bond wire attach

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
US2778980A (en) * 1954-08-30 1957-01-22 Gen Electric High power junction semiconductor device
US2842668A (en) * 1955-05-25 1958-07-08 Ibm High frequency transistor oscillator
NL102391C (US20080005853A1-20080110-C00027.png) * 1955-09-02
US2953693A (en) * 1957-02-27 1960-09-20 Westinghouse Electric Corp Semiconductor diode
NL233303A (US20080005853A1-20080110-C00027.png) * 1957-11-30
US3098160A (en) * 1958-02-24 1963-07-16 Clevite Corp Field controlled avalanche semiconductive device
US3040266A (en) * 1958-06-16 1962-06-19 Union Carbide Corp Surface field effect transistor amplifier
US3024140A (en) * 1960-07-05 1962-03-06 Space Technology Lab Inc Nonlinear electrical arrangement
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor

Also Published As

Publication number Publication date
GB1002267A (en) 1965-08-25
NL286122A (US20080005853A1-20080110-C00027.png) 1965-02-10
US3254276A (en) 1966-05-31
ES281118A1 (es) 1963-03-01
FR1343659A (fr) 1963-11-22

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