|
US3312947A
(en)
*
|
1963-12-31 |
1967-04-04 |
Bell Telephone Labor Inc |
Plural memory system with internal memory transfer and duplicated information
|
|
US3350690A
(en)
*
|
1964-02-25 |
1967-10-31 |
Ibm |
Automatic data correction for batchfabricated memories
|
|
US3331058A
(en)
*
|
1964-12-24 |
1967-07-11 |
Fairchild Camera Instr Co |
Error free memory
|
|
US3343131A
(en)
*
|
1964-12-31 |
1967-09-19 |
Ibm |
Printer control apparatus including code modification means
|
|
US3373407A
(en)
*
|
1965-08-02 |
1968-03-12 |
Rca Corp |
Scratch pad computer system
|
|
US3434116A
(en)
*
|
1966-06-15 |
1969-03-18 |
Ibm |
Scheme for circumventing bad memory cells
|
|
US3633175A
(en)
*
|
1969-05-15 |
1972-01-04 |
Honeywell Inc |
Defect-tolerant digital memory system
|
|
DE1963895C3
(de)
*
|
1969-06-21 |
1973-11-29 |
Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt |
Datenspeicher und Datenspeicher anste'uerschaltung
|
|
US3654610A
(en)
*
|
1970-09-28 |
1972-04-04 |
Fairchild Camera Instr Co |
Use of faulty storage circuits by position coding
|
|
US3765001A
(en)
*
|
1970-09-30 |
1973-10-09 |
Ibm |
Address translation logic which permits a monolithic memory to utilize defective storage cells
|
|
JPS5128449B1
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1971-03-19 |
1976-08-19 |
|
|
|
US3735368A
(en)
*
|
1971-06-25 |
1973-05-22 |
Ibm |
Full capacity monolithic memory utilizing defective storage cells
|
|
US3753235A
(en)
*
|
1971-08-18 |
1973-08-14 |
Ibm |
Monolithic memory module redundancy scheme using prewired substrates
|
|
US3781826A
(en)
*
|
1971-11-15 |
1973-12-25 |
Ibm |
Monolithic memory utilizing defective storage cells
|
|
GB1371597A
(en)
*
|
1972-05-01 |
1974-10-23 |
Ibm |
Bubble domain memory system
|
|
US3792450A
(en)
*
|
1972-05-08 |
1974-02-12 |
Singer Co |
System for overcoming faults in magnetic anisotropic material
|
|
US3800294A
(en)
*
|
1973-06-13 |
1974-03-26 |
Ibm |
System for improving the reliability of systems using dirty memories
|
|
IT1006973B
(it)
*
|
1974-01-18 |
1976-10-20 |
Honeywell Inf Systems |
Apparato di riconfigurazione di memoria
|
|
US4038648A
(en)
*
|
1974-06-03 |
1977-07-26 |
Chesley Gilman D |
Self-configurable circuit structure for achieving wafer scale integration
|
|
JPS5193641A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1975-02-14 |
1976-08-17 |
|
|
|
JPS5752799Y2
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1975-06-13 |
1982-11-16 |
|
|
|
US4058851A
(en)
*
|
1976-10-18 |
1977-11-15 |
Sperry Rand Corporation |
Conditional bypass of error correction for dual memory access time selection
|
|
DE2739952C2
(de)
*
|
1977-09-05 |
1983-10-13 |
Computer Gesellschaft Konstanz Mbh, 7750 Konstanz |
Großintegrierter Halbleiter-Speicherbaustein in Form einer unzerteilten Halbleiterscheibe
|
|
CA1121515A
(en)
*
|
1977-12-08 |
1982-04-06 |
Charles P. Ryan |
Cache memory location selection mechanism
|
|
US4497020A
(en)
*
|
1981-06-30 |
1985-01-29 |
Ampex Corporation |
Selective mapping system and method
|
|
US4475194A
(en)
*
|
1982-03-30 |
1984-10-02 |
International Business Machines Corporation |
Dynamic replacement of defective memory words
|
|
JP3154892B2
(ja)
*
|
1994-05-10 |
2001-04-09 |
株式会社東芝 |
Icメモリカードおよびそのicメモリカードの検査方法
|
|
EP1435625A1
(en)
*
|
2002-12-30 |
2004-07-07 |
STMicroelectronics S.r.l. |
Non volatile memory device including a predetermined number of sectors
|