BE620882A - - Google Patents

Info

Publication number
BE620882A
BE620882A BE620882DA BE620882A BE 620882 A BE620882 A BE 620882A BE 620882D A BE620882D A BE 620882DA BE 620882 A BE620882 A BE 620882A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE620882A publication Critical patent/BE620882A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
BE620882D 1961-05-08 BE620882A (US07579456-20090825-P00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US108439A US3245895A (en) 1961-05-08 1961-05-08 Ion beam deposition as a means of making electric circuits and circuit elements

Publications (1)

Publication Number Publication Date
BE620882A true BE620882A (US07579456-20090825-P00002.png)

Family

ID=22322213

Family Applications (1)

Application Number Title Priority Date Filing Date
BE620882D BE620882A (US07579456-20090825-P00002.png) 1961-05-08

Country Status (6)

Country Link
US (1) US3245895A (US07579456-20090825-P00002.png)
BE (1) BE620882A (US07579456-20090825-P00002.png)
DE (1) DE1464258A1 (US07579456-20090825-P00002.png)
GB (1) GB1010209A (US07579456-20090825-P00002.png)
LU (1) LU42151A1 (US07579456-20090825-P00002.png)
NL (1) NL281145A (US07579456-20090825-P00002.png)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341352A (en) * 1962-12-10 1967-09-12 Kenneth W Ehlers Process for treating metallic surfaces with an ionic beam
US3321390A (en) * 1963-10-17 1967-05-23 Sperry Rand Corp Microcircuits formed by radio-fre-quency brush discharges
US3386909A (en) * 1964-12-08 1968-06-04 Air Force Usa Apparatus for depositing material on a filament from ionized coating material
US3913520A (en) * 1972-08-14 1975-10-21 Precision Thin Film Corp High vacuum deposition apparatus
US4066527A (en) * 1975-07-18 1978-01-03 Futaba Denshi Kogyo K. K. Method of producing semiconductor device
NL7905720A (nl) * 1979-07-24 1981-01-27 Hazemeijer Bv Werkwijze voor het verbeteren van schakelkontakten, in het bijzonder voor vakuumschakelaars.
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
DK116681A (da) * 1981-03-16 1982-09-17 G Soerensen Fremgangsmaade til fremstilling af en legering eller en blanding af gundstoffer i et substrats overflade
US4520039A (en) * 1982-09-23 1985-05-28 Sovonics Solar Systems Compositionally varied materials and method for synthesizing the materials
US4664960A (en) * 1982-09-23 1987-05-12 Energy Conversion Devices, Inc. Compositionally varied materials and method for synthesizing the materials
GB2148608B (en) * 1983-10-22 1987-03-18 Stc Plc Forming conductive regions in polymeric materials
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
JPS6353259A (ja) * 1986-08-22 1988-03-07 Mitsubishi Electric Corp 薄膜形成方法
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
GB9113023D0 (en) 1991-06-17 1991-08-07 Xaar Ltd Multi-channel arrary droplet deposition apparatus and method of manufacture thereof
JP3177897B2 (ja) 1996-04-23 2001-06-18 ザール テクノロジー リミテッド 液滴デポジット装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2465715A (en) * 1946-01-22 1949-03-29 Allied Chem & Dye Corp Isolation of styrene by azeotropic distillation with morpholines
US2702863A (en) * 1949-07-12 1955-02-22 Koch Jorgen Method of treating optical elements
BE500536A (US07579456-20090825-P00002.png) * 1950-01-31
US2784115A (en) * 1953-05-04 1957-03-05 Eastman Kodak Co Method of producing titanium dioxide coatings
US2860251A (en) * 1953-10-15 1958-11-11 Rauland Corp Apparatus for manufacturing semi-conductor devices
US2921892A (en) * 1954-12-08 1960-01-19 Amalgamated Growth Ind Inc Apparatus and process for conducting chemical reactions
US3119707A (en) * 1960-03-31 1964-01-28 Space Technology Lab Inc Method for the deposition of thin films by electron deposition
US3117022A (en) * 1960-09-06 1964-01-07 Space Technhology Lab Inc Deposition arrangement

Also Published As

Publication number Publication date
LU42151A1 (US07579456-20090825-P00002.png) 1963-01-31
NL281145A (US07579456-20090825-P00002.png)
GB1010209A (en) 1965-11-17
DE1464258A1 (de) 1969-03-27
US3245895A (en) 1966-04-12

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