BE620161A - - Google Patents

Info

Publication number
BE620161A
BE620161A BE620161DA BE620161A BE 620161 A BE620161 A BE 620161A BE 620161D A BE620161D A BE 620161DA BE 620161 A BE620161 A BE 620161A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE620161A publication Critical patent/BE620161A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
BE620161D 1961-07-14 BE620161A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN0020331 1961-07-14

Publications (1)

Publication Number Publication Date
BE620161A true BE620161A (fr)

Family

ID=7341257

Family Applications (1)

Application Number Title Priority Date Filing Date
BE620161D BE620161A (fr) 1961-07-14

Country Status (7)

Country Link
US (1) US3194700A (fr)
BE (1) BE620161A (fr)
CH (1) CH419351A (fr)
DE (1) DE1414955B2 (fr)
DK (1) DK112889B (fr)
GB (1) GB1003983A (fr)
NL (2) NL141331B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453154A (en) * 1966-06-17 1969-07-01 Globe Union Inc Process for establishing low zener breakdown voltages in semiconductor regulators
JPH0693441B2 (ja) * 1989-09-22 1994-11-16 株式会社東芝 半導体集積回路装置の加熱処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2849341A (en) * 1953-05-01 1958-08-26 Rca Corp Method for making semi-conductor devices
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
US2820841A (en) * 1956-05-10 1958-01-21 Clevite Corp Photovoltaic cells and methods of fabricating same
US2980560A (en) * 1957-07-29 1961-04-18 Rca Corp Methods of making semiconductor devices
US3114663A (en) * 1960-03-29 1963-12-17 Rca Corp Method of providing semiconductor wafers with protective and masking coatings

Also Published As

Publication number Publication date
DK112889B (da) 1969-01-27
DE1414955B2 (de) 1971-08-19
CH419351A (de) 1966-08-31
NL280773A (fr)
DE1414955A1 (de) 1968-10-10
NL141331B (nl) 1974-02-15
GB1003983A (en) 1965-09-08
US3194700A (en) 1965-07-13

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