BE538469A - - Google Patents
Info
- Publication number
- BE538469A BE538469A BE538469DA BE538469A BE 538469 A BE538469 A BE 538469A BE 538469D A BE538469D A BE 538469DA BE 538469 A BE538469 A BE 538469A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US432638A US2819191A (en) | 1954-05-27 | 1954-05-27 | Method of fabricating a p-n junction |
Publications (1)
Publication Number | Publication Date |
---|---|
BE538469A true BE538469A (es) |
Family
ID=23716981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE538469D BE538469A (es) | 1954-05-27 |
Country Status (4)
Country | Link |
---|---|
US (1) | US2819191A (es) |
BE (1) | BE538469A (es) |
DE (1) | DE1036394B (es) |
GB (1) | GB782863A (es) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2977257A (en) * | 1959-09-17 | 1961-03-28 | Gen Motors Corp | Method and apparatus for fabricating junction transistors |
US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
US3293010A (en) * | 1964-01-02 | 1966-12-20 | Motorola Inc | Passivated alloy diode |
US3453154A (en) * | 1966-06-17 | 1969-07-01 | Globe Union Inc | Process for establishing low zener breakdown voltages in semiconductor regulators |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP4472073B2 (ja) * | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL70486C (es) * | 1945-12-29 | |||
NL171020B (nl) * | 1948-12-29 | Union Carbide Corp | Werkwijze om zure gassen af te scheiden uit een stoom bevattend gasmengsel. | |
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
BE509317A (es) * | 1951-03-07 | 1900-01-01 |
-
0
- BE BE538469D patent/BE538469A/xx unknown
-
1954
- 1954-05-27 US US432638A patent/US2819191A/en not_active Expired - Lifetime
-
1955
- 1955-03-08 DE DEW16181A patent/DE1036394B/de active Pending
- 1955-05-25 GB GB15075/55A patent/GB782863A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1036394B (de) | 1958-08-14 |
GB782863A (en) | 1957-09-11 |
US2819191A (en) | 1958-01-07 |