BE536988A - - Google Patents

Info

Publication number
BE536988A
BE536988A BE536988DA BE536988A BE 536988 A BE536988 A BE 536988A BE 536988D A BE536988D A BE 536988DA BE 536988 A BE536988 A BE 536988A
Authority
BE
Belgium
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE536988A publication Critical patent/BE536988A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
BE536988D 1954-04-01 BE536988A (US07122603-20061017-C00249.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US420401A US2843511A (en) 1954-04-01 1954-04-01 Semi-conductor devices
GB10949/54A GB766671A (en) 1954-04-01 1954-04-14 Improvements in or relating to semi-conductor materials

Publications (1)

Publication Number Publication Date
BE536988A true BE536988A (US07122603-20061017-C00249.png)

Family

ID=26247883

Family Applications (2)

Application Number Title Priority Date Filing Date
BE539649D BE539649A (US07122603-20061017-C00249.png) 1954-04-01
BE536988D BE536988A (US07122603-20061017-C00249.png) 1954-04-01

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BE539649D BE539649A (US07122603-20061017-C00249.png) 1954-04-01

Country Status (7)

Country Link
US (2) US2843511A (US07122603-20061017-C00249.png)
AU (1) AU204456B1 (US07122603-20061017-C00249.png)
BE (2) BE536988A (US07122603-20061017-C00249.png)
CH (2) CH363416A (US07122603-20061017-C00249.png)
DE (2) DE967322C (US07122603-20061017-C00249.png)
GB (2) GB766671A (US07122603-20061017-C00249.png)
NL (3) NL94819C (US07122603-20061017-C00249.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (de) * 1955-12-24 1965-12-16 Telefunken Patent Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
US2956913A (en) * 1958-11-20 1960-10-18 Texas Instruments Inc Transistor and method of making same
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
NL113824C (US07122603-20061017-C00249.png) * 1959-09-14
DE1151605C2 (de) * 1960-08-26 1964-02-06 Telefunken Patent Halbleiterbauelement
US3094633A (en) * 1960-09-29 1963-06-18 Itt Semiconductor multiplanar rectifying junction diode
US3242392A (en) * 1961-04-06 1966-03-22 Nippon Electric Co Low rc semiconductor diode
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
NL84057C (US07122603-20061017-C00249.png) * 1948-02-26
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
NL84061C (US07122603-20061017-C00249.png) * 1948-06-26
BE500302A (US07122603-20061017-C00249.png) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE509110A (US07122603-20061017-C00249.png) * 1951-05-05
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (de) * 1955-12-24 1965-12-16 Telefunken Patent Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode

Also Published As

Publication number Publication date
DE1047944B (de) 1958-12-31
AU204456B1 (en) 1955-09-29
GB804000A (en) 1958-11-05
CH356209A (de) 1961-08-15
BE539649A (US07122603-20061017-C00249.png)
DE967322C (de) 1957-10-31
GB766671A (en) 1957-01-23
USRE25952E (en) 1965-12-14
CH363416A (de) 1962-07-31
NL196136A (US07122603-20061017-C00249.png)
US2843511A (en) 1958-07-15
NL94819C (US07122603-20061017-C00249.png)
NL197918A (US07122603-20061017-C00249.png)

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