BE532508A - - Google Patents

Info

Publication number
BE532508A
BE532508A BE532508DA BE532508A BE 532508 A BE532508 A BE 532508A BE 532508D A BE532508D A BE 532508DA BE 532508 A BE532508 A BE 532508A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE532508A publication Critical patent/BE532508A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/16Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture specially for use as rectifiers or detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE532508D 1953-10-16 BE532508A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US386580A US2870344A (en) 1953-10-16 1953-10-16 Semiconductor devices

Publications (1)

Publication Number Publication Date
BE532508A true BE532508A (es)

Family

ID=23526190

Family Applications (1)

Application Number Title Priority Date Filing Date
BE532508D BE532508A (es) 1953-10-16

Country Status (6)

Country Link
US (1) US2870344A (es)
BE (1) BE532508A (es)
CH (1) CH328249A (es)
DE (1) DE1021955B (es)
FR (1) FR1106324A (es)
NL (1) NL190984A (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998550A (en) * 1954-06-30 1961-08-29 Rca Corp Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
US3017548A (en) * 1958-01-20 1962-01-16 Bell Telephone Labor Inc Signal translating device
US3114658A (en) * 1959-10-22 1963-12-17 Philco Corp Electric cell
US3271198A (en) * 1959-12-30 1966-09-06 Ibm Electrolytic semiconductor photocell
DE1414950A1 (de) * 1960-06-27 1968-10-03 Univ New York Stromleitungsvorrichtung
US3255391A (en) * 1960-11-25 1966-06-07 Yamamoto Keita Electrochemical apparatus
US3274403A (en) * 1961-05-26 1966-09-20 Hoffman Electronics Corp Gaseous thermocouple utilizing a semiconductor
US3879228A (en) * 1972-03-06 1975-04-22 Us Air Force Photo-regenerative electrochemical energy converter
US3925212A (en) * 1974-01-02 1975-12-09 Dimiter I Tchernev Device for solar energy conversion by photo-electrolytic decomposition of water
US4124464A (en) * 1977-10-19 1978-11-07 Rca Corporation Grooved n-type TiO2 semiconductor anode for a water photolysis apparatus
DE3917702A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Verfahren zur ortsaufgeloesten bestimmung der diffusionslaenge von minoritaetsladungstraegern in einem halbleiterkristallkoerper mit hilfe einer elektrolytischen zelle

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL85857C (es) * 1948-02-26
BE489418A (es) * 1948-06-26
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
NL148200B (nl) * 1948-12-29 Gen Electric Dynamo-elektrische machine met terugvoerinrichting voor het smeermiddel van een hulsleger.
US2713644A (en) * 1954-06-29 1955-07-19 Rca Corp Self-powered semiconductor devices

Also Published As

Publication number Publication date
CH328249A (fr) 1958-02-28
FR1106324A (fr) 1955-12-16
NL190984A (es)
US2870344A (en) 1959-01-20
DE1021955B (de) 1958-01-02

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