Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
  • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
  • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J17/00—Gas-filled discharge tubes with solid cathode
  • H01J17/02—Details
  • H01J17/30—Igniting arrangements
  • H01J17/32—Igniting by associated radioactive materials or fillings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
  • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• Ceramic Engineering (AREA)
• Other Surface Treatments For Metallic Materials (AREA)
• Light Receiving Elements (AREA)
• Die Bonding (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=10064202

Family Applications (1)

Country Status (6)

Families Citing this family (13)

• 0
  • BE BE467188D patent/BE467188A/xx unknown
• 1939
  • 1939-05-26 GB GB15717/39A patent/GB529792A/en not_active Expired
• 1940
  • 1940-01-31 US US316608A patent/US2235051A/en not_active Expired - Lifetime
  • 1940-03-30 FR FR864586D patent/FR864586A/en not_active Expired
• 1946
  • 1946-05-25 CH CH260423D patent/CH260423A/en unknown
  • 1946-05-29 CH CH260424D patent/CH260424A/en unknown
  • 1946-08-29 ES ES0174802A patent/ES174802A1/en not_active Expired

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