BE408194A - - Google Patents

Info

Publication number
BE408194A
BE408194A BE408194DA BE408194A BE 408194 A BE408194 A BE 408194A BE 408194D A BE408194D A BE 408194DA BE 408194 A BE408194 A BE 408194A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE408194A publication Critical patent/BE408194A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02GINSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02Details
    • H02G3/08Distribution boxes; Connection or junction boxes
    • H02G3/081Bases, casings or covers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
BE408194D 1934-03-02 BE408194A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE439457X 1934-03-02

Publications (1)

Publication Number Publication Date
BE408194A true BE408194A (en)

Family

ID=6507313

Family Applications (1)

Application Number Title Priority Date Filing Date
BE408194D BE408194A (en) 1934-03-02

Country Status (3)

Country Link
BE (1) BE408194A (en)
FR (1) FR786454A (en)
GB (1) GB439457A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2094155A1 (en) * 1970-06-10 1972-02-04 Ibm

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE971775C (en) * 1942-09-22 1959-03-26 Hildegard Koepke Dr Device for amplifying electrical currents and voltages
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
NL84054C (en) * 1948-02-26
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
DE973206C (en) * 1949-05-31 1959-12-24 Siemens Ag Adjustable resistance
US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2935624A (en) * 1955-08-26 1960-05-03 Forman Ralph Electrostatically-controlled resistance tube
US2985783A (en) * 1956-07-30 1961-05-23 Westinghouse Electric Corp Thin screen members
US2934723A (en) * 1956-10-24 1960-04-26 Bell Telephone Labor Inc Attenuator
US3001135A (en) * 1958-05-21 1961-09-19 Sylvania Electric Prod Device for measuring electrical power
US3014188A (en) * 1958-09-12 1961-12-19 Westinghouse Electric Corp Variable q microwave cavity and microwave switching apparatus for use therewith
US3001134A (en) * 1958-10-10 1961-09-19 Sylvania Electric Prod Semiconductor device
NL282170A (en) * 1961-08-17
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
JPS5849036B2 (en) * 1974-08-23 1983-11-01 ホシデンキセイゾウ カブシキガイシヤ Hakumaku Transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2094155A1 (en) * 1970-06-10 1972-02-04 Ibm

Also Published As

Publication number Publication date
GB439457A (en) 1935-12-06
FR786454A (en) 1935-09-03

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