AU8906282A - Halbleiterdiode - Google Patents

Halbleiterdiode

Info

Publication number
AU8906282A
AU8906282A AU89062/82A AU8906282A AU8906282A AU 8906282 A AU8906282 A AU 8906282A AU 89062/82 A AU89062/82 A AU 89062/82A AU 8906282 A AU8906282 A AU 8906282A AU 8906282 A AU8906282 A AU 8906282A
Authority
AU
Australia
Prior art keywords
halbleiterdiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU89062/82A
Inventor
Heinke Wolfgang
Heyke Klaus
Michel Hartmut
Schwenk Siegfried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of AU8906282A publication Critical patent/AU8906282A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/866Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Charge By Means Of Generators (AREA)
  • Bipolar Transistors (AREA)
  • Synchronous Machinery (AREA)
  • Thyristors (AREA)
AU89062/82A 1981-11-25 1982-09-03 Halbleiterdiode Abandoned AU8906282A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19813146609 DE3146609A1 (en) 1981-11-25 1981-11-25 SEMICONDUCTOR DIODE
DE3145609 1981-11-25
PCT/DE1982/000176 WO1983002036A1 (en) 1981-11-25 1982-09-03 Semiconductor diode

Publications (1)

Publication Number Publication Date
AU8906282A true AU8906282A (en) 1983-06-17

Family

ID=6147111

Family Applications (1)

Application Number Title Priority Date Filing Date
AU89062/82A Abandoned AU8906282A (en) 1981-11-25 1982-09-03 Halbleiterdiode

Country Status (6)

Country Link
EP (1) EP0094941A1 (en)
JP (1) JPS58502029A (en)
AU (1) AU8906282A (en)
DE (1) DE3146609A1 (en)
IT (1) IT1153012B (en)
WO (1) WO1983002036A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171528A (en) * 1977-06-13 1979-10-16 International Telephone And Telegraph Corporation Solderable zener diode
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
DE2916114A1 (en) * 1978-04-21 1979-10-31 Hitachi Ltd SEMI-CONDUCTOR DEVICE
DE2928758A1 (en) * 1979-07-17 1981-02-05 Bosch Gmbh Robert High stability planar Zener diode - has split low doped N zones with higher doped N bridge zone under oxide layer

Also Published As

Publication number Publication date
WO1983002036A1 (en) 1983-06-09
JPS58502029A (en) 1983-11-24
IT8224209A0 (en) 1982-11-12
DE3146609A1 (en) 1983-07-07
EP0094941A1 (en) 1983-11-30
IT1153012B (en) 1987-01-14

Similar Documents

Publication Publication Date Title
AU551769B2 (en) Imidazodiazepines
AU551891B2 (en) Imidazodiazepines
AU561395B2 (en) 3-amino-benzazepin-2-ones
AU551756B2 (en) Imidazodiazepines
AU548397B2 (en) N-phenylsulphonyl-n:-pyrimidinyl-and-triazinyl-ureas
AU549409B2 (en) Polyetheresterimide
AU549410B2 (en) Polyetheresterimide
AU553589B2 (en) Benzoheterocycles
AU551831B2 (en) Imidazodiazepines
AU557714B2 (en) 2-arylimidazopyridines
AU583711B2 (en) 5-trifluoromethylpyridyl-2-oxyanilines
AU550571B2 (en) Co-nitration
AU546185B2 (en) Levitationarium
AU547405B2 (en) Amidobenzamides
AU545678B2 (en) Sleeper-tamper
AU564233B2 (en) N-substituted-2-pyridylindoles
AU529966B2 (en) Washer-dehydrator
AU552046B2 (en) Imidazodiazepines
AU556935B2 (en) Azolyl-pentene-3-ones and -3-ols
AU565320B2 (en) Pyridobenzodiazepines
AU557575B2 (en) 4-cyano-2-azetidinones
AU547692B2 (en) Trifluoromethylphenyltetrahydropyridines
AU558041B2 (en) Tetrahydronaphthoxazoles
AU555113B2 (en) Alkoxyaminohydridosilanes
AU537889B2 (en) Sleeper-tamper