AU7987498A - Active large area avalanche photodiode array - Google Patents

Active large area avalanche photodiode array

Info

Publication number
AU7987498A
AU7987498A AU79874/98A AU7987498A AU7987498A AU 7987498 A AU7987498 A AU 7987498A AU 79874/98 A AU79874/98 A AU 79874/98A AU 7987498 A AU7987498 A AU 7987498A AU 7987498 A AU7987498 A AU 7987498A
Authority
AU
Australia
Prior art keywords
large area
photodiode array
avalanche photodiode
active large
area avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU79874/98A
Inventor
Andrzej J. Dabrowski
Vladimir K. Eremin
Anatoly I. Sidorov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Photonix Inc
Original Assignee
Advanced Photonix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/881,906 external-priority patent/US5831322A/en
Priority claimed from US08/882,055 external-priority patent/US5757057A/en
Application filed by Advanced Photonix Inc filed Critical Advanced Photonix Inc
Publication of AU7987498A publication Critical patent/AU7987498A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
AU79874/98A 1997-06-25 1998-06-25 Active large area avalanche photodiode array Abandoned AU7987498A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08882055 1997-06-25
US08881906 1997-06-25
US08/881,906 US5831322A (en) 1997-06-25 1997-06-25 Active large area avalanche photodiode array
US08/882,055 US5757057A (en) 1997-06-25 1997-06-25 Large area avalanche photodiode array
PCT/US1998/013166 WO1998059373A1 (en) 1997-06-25 1998-06-25 Active large area avalanche photodiode array

Publications (1)

Publication Number Publication Date
AU7987498A true AU7987498A (en) 1999-01-04

Family

ID=27128641

Family Applications (1)

Application Number Title Priority Date Filing Date
AU79874/98A Abandoned AU7987498A (en) 1997-06-25 1998-06-25 Active large area avalanche photodiode array

Country Status (5)

Country Link
EP (1) EP0993687A1 (en)
JP (1) JP2002506573A (en)
AU (1) AU7987498A (en)
CA (1) CA2294929A1 (en)
WO (1) WO1998059373A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704277B2 (en) 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor
US7638852B2 (en) 2006-05-09 2009-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US7791170B2 (en) * 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
DE102007037020B3 (en) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche photodiode for use in Avalanche radiation detector, has electrode arranged lateral to diode layer so that it depletes substrate laterally adjacent to layer, when resistance layer is shielded from diode layer opposite to electrode
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
WO2023148768A1 (en) * 2022-02-02 2023-08-10 Ams Semiconductors India Pvt. Ltd. Photodiode and method of operation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation
US5146296A (en) * 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
US5057892A (en) * 1990-09-14 1991-10-15 Xsirius Photonics, Inc. Light responsive avalanche diode
US5446308A (en) * 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode

Also Published As

Publication number Publication date
WO1998059373A1 (en) 1998-12-30
EP0993687A1 (en) 2000-04-19
CA2294929A1 (en) 1998-12-30
JP2002506573A (en) 2002-02-26

Similar Documents

Publication Publication Date Title
AU690870B2 (en) Active array self calibration
AU5109198A (en) Infrared focal plane array
AU2739597A (en) Semiconductor hetero-interface photodetector
AU2556699A (en) Solid state neutron detector array
AU6788100A (en) Liquid array technology
AU8551198A (en) Agrochemical formulation
GB9725128D0 (en) Solar array system
AU1979501A (en) Optically active materials
AU3375899A (en) Photodiode arrays having minimized cross-talk between diodes
AU6086398A (en) Image-directed active range finding system
GB2327586B (en) An agricultural implement
AUPO662497A0 (en) An epicardial electrode array
AUPO714197A0 (en) Multi-strategy array processor
AU6604598A (en) Farm implement
AU2001282937A1 (en) Spectrophotometer system having active pixel array
DE69824398D1 (en) Photodiode array
AU3950499A (en) Optically active compounds
AU6419798A (en) Transmitting photoelectric sensor array
AU7987498A (en) Active large area avalanche photodiode array
DE69822459D1 (en) Photodiode array
GB9917677D0 (en) Active matrix array devices
AU4833697A (en) Self-propelled implement
DE69812596D1 (en) Photodiode array
EP0911881A3 (en) Semiconductor diode array having radiation degradation retardation means
AU1093697A (en) Active bio-compounds

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase