AU7970898A - Forward body bias transistor circuits - Google Patents

Forward body bias transistor circuits

Info

Publication number
AU7970898A
AU7970898A AU79708/98A AU7970898A AU7970898A AU 7970898 A AU7970898 A AU 7970898A AU 79708/98 A AU79708/98 A AU 79708/98A AU 7970898 A AU7970898 A AU 7970898A AU 7970898 A AU7970898 A AU 7970898A
Authority
AU
Australia
Prior art keywords
body bias
bias transistor
transistor circuits
forward body
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU79708/98A
Inventor
Shekhar Y. Borkar
Vivek K. De
Ali Keshavarzi
Siva G. Narendra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/880,047 external-priority patent/US6166584A/en
Priority claimed from US09/078,395 external-priority patent/US6300819B1/en
Priority claimed from US09/078,388 external-priority patent/US6232827B1/en
Priority claimed from US09/078,424 external-priority patent/US6218895B1/en
Priority claimed from US09/078,432 external-priority patent/US6100751A/en
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU7970898A publication Critical patent/AU7970898A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
AU79708/98A 1997-06-20 1998-06-16 Forward body bias transistor circuits Abandoned AU7970898A (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US08/880,047 US6166584A (en) 1997-06-20 1997-06-20 Forward biased MOS circuits
US08880047 1997-06-20
US09/078,395 US6300819B1 (en) 1997-06-20 1998-05-13 Circuit including forward body bias from supply voltage and ground nodes
US09/078,388 US6232827B1 (en) 1997-06-20 1998-05-13 Transistors providing desired threshold voltage and reduced short channel effects with forward body bias
US09078424 1998-05-13
US09/078,424 US6218895B1 (en) 1997-06-20 1998-05-13 Multiple well transistor circuits having forward body bias
US09/078,432 US6100751A (en) 1997-06-20 1998-05-13 Forward body biased field effect transistor providing decoupling capacitance
US09078388 1998-05-13
US09078432 1998-05-13
US09078395 1998-05-13
PCT/US1998/012523 WO1998059419A1 (en) 1997-06-20 1998-06-16 Forward body bias transistor circuits

Publications (1)

Publication Number Publication Date
AU7970898A true AU7970898A (en) 1999-01-04

Family

ID=27536174

Family Applications (1)

Application Number Title Priority Date Filing Date
AU79708/98A Abandoned AU7970898A (en) 1997-06-20 1998-06-16 Forward body bias transistor circuits

Country Status (4)

Country Link
EP (1) EP1012971A4 (en)
CN (1) CN1196263C (en)
AU (1) AU7970898A (en)
WO (1) WO1998059419A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411156B1 (en) 1997-06-20 2002-06-25 Intel Corporation Employing transistor body bias in controlling chip parameters
FR2783941B1 (en) 1998-09-30 2004-03-12 St Microelectronics Sa CIRCUIT FOR CONTROLLING AN OUTPUT VOLTAGE OF A POSITIVE CHARGE PUMP DEVICE
US6272666B1 (en) 1998-12-30 2001-08-07 Intel Corporation Transistor group mismatch detection and reduction
US6484265B2 (en) 1998-12-30 2002-11-19 Intel Corporation Software control of transistor body bias in controlling chip parameters
DE19911463C1 (en) * 1999-03-15 2001-02-08 Siemens Ag Sense amplifier arrangement with field effect transistor with short channel length and adjustable threshold voltage
JP2000286388A (en) * 1999-03-30 2000-10-13 Advantest Corp Semiconductor device
US6515534B2 (en) 1999-12-30 2003-02-04 Intel Corporation Enhanced conductivity body biased PMOS driver
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
US20030134479A1 (en) * 2002-01-16 2003-07-17 Salling Craig T. Eliminating substrate noise by an electrically isolated high-voltage I/O transistor
US6864539B2 (en) * 2002-07-19 2005-03-08 Semiconductor Technology Academic Research Center Semiconductor integrated circuit device having body biasing circuit for generating forward well bias voltage of suitable level by using simple circuitry
US7049898B2 (en) * 2003-09-30 2006-05-23 Intel Corporation Strained-silicon voltage controlled oscillator (VCO)
CN101453157B (en) * 2007-11-30 2012-12-19 成都芯源系统有限公司 High-side power MOSFET switch tube group with reverse current blocking function
US7924087B2 (en) 2008-05-20 2011-04-12 Mediatek Inc. Reference buffer circuit
TWI405297B (en) * 2008-09-25 2013-08-11 Via Tech Inc Microprocessors﹑intergarated circuits and methods for reducing noises thereof
US8723592B2 (en) * 2011-08-12 2014-05-13 Nxp B.V. Adjustable body bias circuit
KR20130084029A (en) * 2012-01-16 2013-07-24 삼성전자주식회사 Method of designing a system-on-chip including a tapless standard cell, designing system and system-on-chip
FR3003996B1 (en) * 2013-03-28 2015-04-24 Commissariat Energie Atomique METHOD FOR CONTROLLING AN INTEGRATED CIRCUIT
EP3014768A4 (en) * 2013-06-25 2017-02-22 ESS Technology, Inc. Delay circuit independent of supply voltage

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit
JPS6020394A (en) * 1983-07-14 1985-02-01 Ricoh Co Ltd Power source switching circuit
DE69328743T2 (en) * 1992-03-30 2000-09-07 Mitsubishi Electric Corp Semiconductor device
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3307453B2 (en) * 1993-03-18 2002-07-24 ソニー株式会社 Boost circuit
KR0169157B1 (en) * 1993-11-29 1999-02-01 기다오까 다까시 Semiconductor circuit and mos-dram
JP2822881B2 (en) * 1994-03-30 1998-11-11 日本電気株式会社 Semiconductor integrated circuit device
JPH0832068A (en) * 1994-07-08 1996-02-02 Nippondenso Co Ltd Semiconductor device
JP3175521B2 (en) * 1995-01-27 2001-06-11 日本電気株式会社 Silicon-on-insulator semiconductor device and bias voltage generation circuit
EP0739097B1 (en) * 1995-04-21 2004-04-07 Nippon Telegraph And Telephone Corporation MOSFET circuit and CMOS logic circuit using the same
KR100283839B1 (en) * 1995-06-06 2001-04-02 니시무로 타이죠 Semiconductor integrated circuit device
JP3641511B2 (en) * 1995-06-16 2005-04-20 株式会社ルネサステクノロジ Semiconductor device
US5689144A (en) * 1996-05-15 1997-11-18 Siliconix Incorporated Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance

Also Published As

Publication number Publication date
CN1267406A (en) 2000-09-20
EP1012971A1 (en) 2000-06-28
WO1998059419A1 (en) 1998-12-30
CN1196263C (en) 2005-04-06
EP1012971A4 (en) 2000-09-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase