AU6603600A - A switching device - Google Patents

A switching device

Info

Publication number
AU6603600A
AU6603600A AU66036/00A AU6603600A AU6603600A AU 6603600 A AU6603600 A AU 6603600A AU 66036/00 A AU66036/00 A AU 66036/00A AU 6603600 A AU6603600 A AU 6603600A AU 6603600 A AU6603600 A AU 6603600A
Authority
AU
Australia
Prior art keywords
switching device
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU66036/00A
Inventor
Hans Bernhoff
Johan Hammersberg
Willy Hermansson
Bjorgvin Hjorvarsson
Mark Irwin
Jan Isberg
Peter Isberg
Erik Johansson
Pan Min
Toril Myrtveit
Svante Soderholm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
ABB AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB AB filed Critical ABB AB
Publication of AU6603600A publication Critical patent/AU6603600A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thyristors (AREA)
  • Led Devices (AREA)
AU66036/00A 1999-09-06 2000-08-11 A switching device Abandoned AU6603600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9903149 1999-09-06
SE9903149A SE9903149L (en) 1999-09-06 1999-09-06 Disconnecting device
PCT/SE2000/001568 WO2001018882A1 (en) 1999-09-06 2000-08-11 A switching device

Publications (1)

Publication Number Publication Date
AU6603600A true AU6603600A (en) 2001-04-10

Family

ID=20416876

Family Applications (1)

Application Number Title Priority Date Filing Date
AU66036/00A Abandoned AU6603600A (en) 1999-09-06 2000-08-11 A switching device

Country Status (3)

Country Link
AU (1) AU6603600A (en)
SE (1) SE9903149L (en)
WO (1) WO2001018882A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137772B (en) * 2013-01-31 2015-09-23 安徽工业大学 Novel multi-layer-structursilicon silicon carbide photoconductive switch and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
EP0571142A1 (en) * 1992-05-18 1993-11-24 General Electric Company Platinum doped silicon avalanche photodiode
US5663580A (en) * 1996-03-15 1997-09-02 Abb Research Ltd. Optically triggered semiconductor device

Also Published As

Publication number Publication date
WO2001018882A1 (en) 2001-03-15
SE9903149L (en) 2001-03-07
SE9903149D0 (en) 1999-09-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase