AU6409298A - Infrared radiation source - Google Patents

Infrared radiation source

Info

Publication number
AU6409298A
AU6409298A AU64092/98A AU6409298A AU6409298A AU 6409298 A AU6409298 A AU 6409298A AU 64092/98 A AU64092/98 A AU 64092/98A AU 6409298 A AU6409298 A AU 6409298A AU 6409298 A AU6409298 A AU 6409298A
Authority
AU
Australia
Prior art keywords
radiation source
infrared radiation
infrared
source
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU64092/98A
Inventor
Philip Charles Klipstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Publication of AU6409298A publication Critical patent/AU6409298A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
AU64092/98A 1997-03-11 1998-03-11 Infrared radiation source Abandoned AU6409298A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9704987.8A GB9704987D0 (en) 1997-03-11 1997-03-11 Infrared radiation source
PCT/GB1998/000729 WO1998040916A1 (en) 1997-03-11 1998-03-11 Infrared radiation source

Publications (1)

Publication Number Publication Date
AU6409298A true AU6409298A (en) 1998-09-29

Family

ID=10809026

Family Applications (1)

Application Number Title Priority Date Filing Date
AU64092/98A Abandoned AU6409298A (en) 1997-03-11 1998-03-11 Infrared radiation source

Country Status (3)

Country Link
AU (1) AU6409298A (en)
GB (1) GB9704987D0 (en)
WO (1) WO1998040916A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP2000150957A (en) * 1998-11-12 2000-05-30 Showa Denko Kk Group iii nitride semiconductor light emitting element
EP1130724A1 (en) * 2000-03-03 2001-09-05 Alpes Lasers Quantum cascade laser and method of manufacturing the same
US7176498B2 (en) 2003-08-06 2007-02-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
US7485476B2 (en) 2003-08-06 2009-02-03 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
WO2006077566A2 (en) * 2005-01-20 2006-07-27 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
US7274719B2 (en) 2005-03-09 2007-09-25 Agilent Technologies, Inc. Buried heterostructure quantum cascade laser
KR100842288B1 (en) * 2006-12-08 2008-06-30 한국전자통신연구원 Interband tunneling intersubband transition semiconductor LASER

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2911546B2 (en) * 1990-06-06 1999-06-23 富士通株式会社 Optical semiconductor device and method of manufacturing the same
JP3146710B2 (en) * 1992-12-22 2001-03-19 ソニー株式会社 Light emitting element
US5588015A (en) * 1995-08-22 1996-12-24 University Of Houston Light emitting devices based on interband transitions in type-II quantum well heterostructures

Also Published As

Publication number Publication date
WO1998040916A1 (en) 1998-09-17
GB9704987D0 (en) 1997-04-30

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