AU6396673A - Memory cell - Google Patents

Memory cell

Info

Publication number
AU6396673A
AU6396673A AU63966/73A AU6396673A AU6396673A AU 6396673 A AU6396673 A AU 6396673A AU 63966/73 A AU63966/73 A AU 63966/73A AU 6396673 A AU6396673 A AU 6396673A AU 6396673 A AU6396673 A AU 6396673A
Authority
AU
Australia
Prior art keywords
memory cell
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU63966/73A
Inventor
William M Gosney Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to AU63966/73A priority Critical patent/AU6396673A/en
Publication of AU6396673A publication Critical patent/AU6396673A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
AU63966/73A 1973-12-27 1973-12-27 Memory cell Expired AU6396673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU63966/73A AU6396673A (en) 1973-12-27 1973-12-27 Memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU63966/73A AU6396673A (en) 1973-12-27 1973-12-27 Memory cell

Publications (1)

Publication Number Publication Date
AU6396673A true AU6396673A (en) 1975-07-03

Family

ID=3748731

Family Applications (1)

Application Number Title Priority Date Filing Date
AU63966/73A Expired AU6396673A (en) 1973-12-27 1973-12-27 Memory cell

Country Status (1)

Country Link
AU (1) AU6396673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU578093B2 (en) * 1984-05-11 1988-10-13 Robert Bosch Gmbh Monolithic integrated planar semi-conductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU578093B2 (en) * 1984-05-11 1988-10-13 Robert Bosch Gmbh Monolithic integrated planar semi-conductor device

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