AU6261596A - Nickel-manganese oxide single crystals - Google Patents

Nickel-manganese oxide single crystals

Info

Publication number
AU6261596A
AU6261596A AU62615/96A AU6261596A AU6261596A AU 6261596 A AU6261596 A AU 6261596A AU 62615/96 A AU62615/96 A AU 62615/96A AU 6261596 A AU6261596 A AU 6261596A AU 6261596 A AU6261596 A AU 6261596A
Authority
AU
Australia
Prior art keywords
nickel
manganese oxide
single crystals
oxide single
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU62615/96A
Inventor
John Carter
Carol Zwick Rosen
Donald G. Wickham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermometrics Inc
Original Assignee
Thermometrics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/487,463 external-priority patent/US5830268A/en
Priority claimed from US08/485,851 external-priority patent/US5653954A/en
Priority claimed from US08/488,331 external-priority patent/US6099164A/en
Application filed by Thermometrics Inc filed Critical Thermometrics Inc
Publication of AU6261596A publication Critical patent/AU6261596A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU62615/96A 1995-06-07 1996-06-06 Nickel-manganese oxide single crystals Abandoned AU6261596A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US488331 1995-06-07
US08/487,463 US5830268A (en) 1995-06-07 1995-06-07 Methods of growing nickel-manganese oxide single crystals
US485851 1995-06-07
US08/485,851 US5653954A (en) 1995-06-07 1995-06-07 Nickel-manganese oxide single crystals
US487463 1995-06-07
US08/488,331 US6099164A (en) 1995-06-07 1995-06-07 Sensors incorporating nickel-manganese oxide single crystals
PCT/US1996/009494 WO1996040589A1 (en) 1995-06-07 1996-06-06 Nickel-manganese oxide single crystals

Publications (1)

Publication Number Publication Date
AU6261596A true AU6261596A (en) 1996-12-30

Family

ID=27413726

Family Applications (1)

Application Number Title Priority Date Filing Date
AU62615/96A Abandoned AU6261596A (en) 1995-06-07 1996-06-06 Nickel-manganese oxide single crystals

Country Status (4)

Country Link
EP (1) EP0842119A4 (en)
JP (1) JPH11507904A (en)
AU (1) AU6261596A (en)
WO (1) WO1996040589A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997048644A1 (en) * 1996-06-17 1997-12-24 Thermometrics, Inc. Growth of nickel-cobalt-manganese oxide single crystals
US6125529A (en) * 1996-06-17 2000-10-03 Thermometrics, Inc. Method of making wafer based sensors and wafer chip sensors
KR20100113321A (en) * 2009-04-13 2010-10-21 한국기계연구원 Highly dense and nano-grained spinel ntc thermistor thick films and preparation method thereof
JP5630746B2 (en) * 2010-03-10 2014-11-26 国立大学法人九州大学 Manganese oxide nanowire-covered structure and method for producing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1551999A (en) * 1967-10-20 1969-01-03
FR2582851B1 (en) * 1985-06-04 1988-07-08 Univ Toulouse COMPOSITIONS OF TRANSITION METAL MANGANITES IN THE FORM OF PARTICLES OR IN THE FORM OF CERAMICS, THEIR PREPARATION AND THEIR USE IN PARTICULAR IN THE MANUFACTURE OF THERMISTORS

Also Published As

Publication number Publication date
WO1996040589A1 (en) 1996-12-19
JPH11507904A (en) 1999-07-13
EP0842119A1 (en) 1998-05-20
EP0842119A4 (en) 1998-12-02

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