AU6064273A - Buried channel charge coupled devices - Google Patents
Buried channel charge coupled devicesInfo
- Publication number
- AU6064273A AU6064273A AU60642/73A AU6064273A AU6064273A AU 6064273 A AU6064273 A AU 6064273A AU 60642/73 A AU60642/73 A AU 60642/73A AU 6064273 A AU6064273 A AU 6064273A AU 6064273 A AU6064273 A AU 6064273A
- Authority
- AU
- Australia
- Prior art keywords
- charge coupled
- coupled devices
- buried channel
- channel charge
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29650772A | 1972-10-10 | 1972-10-10 | |
USUS296,507 | 1972-10-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
AU6064273A true AU6064273A (en) | 1975-03-27 |
Family
ID=23142298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU60642/73A Expired AU6064273A (en) | 1972-10-10 | 1973-09-24 | Buried channel charge coupled devices |
Country Status (5)
Country | Link |
---|---|
AU (1) | AU6064273A (en) |
DD (1) | DD107546A5 (en) |
DE (1) | DE2349618A1 (en) |
FR (1) | FR2202370A1 (en) |
IT (1) | IT996773B (en) |
-
1973
- 1973-09-24 AU AU60642/73A patent/AU6064273A/en not_active Expired
- 1973-10-03 DE DE19732349618 patent/DE2349618A1/en active Pending
- 1973-10-04 IT IT69922/73A patent/IT996773B/en active
- 1973-10-08 FR FR7335859A patent/FR2202370A1/fr not_active Withdrawn
- 1973-10-09 DD DD173941A patent/DD107546A5/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2349618A1 (en) | 1974-04-18 |
FR2202370A1 (en) | 1974-05-03 |
DD107546A5 (en) | 1974-08-05 |
IT996773B (en) | 1975-12-10 |
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