AU499874B2 - Ferroelelctric ceramic photovoltaic memory - Google Patents

Ferroelelctric ceramic photovoltaic memory

Info

Publication number
AU499874B2
AU499874B2 AU86915/75A AU8691575A AU499874B2 AU 499874 B2 AU499874 B2 AU 499874B2 AU 86915/75 A AU86915/75 A AU 86915/75A AU 8691575 A AU8691575 A AU 8691575A AU 499874 B2 AU499874 B2 AU 499874B2
Authority
AU
Australia
Prior art keywords
ferroelelctric
ceramic
photovoltaic
memory
photovoltaic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU86915/75A
Other languages
English (en)
Other versions
AU8691575A (en
Inventor
P. S Brody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PHOTOVOLTAIC CERAMIC CORP
Original Assignee
PHOTOVOLTAIC CERAMIC CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/533,365 external-priority patent/US4051465A/en
Application filed by PHOTOVOLTAIC CERAMIC CORP filed Critical PHOTOVOLTAIC CERAMIC CORP
Publication of AU8691575A publication Critical patent/AU8691575A/en
Application granted granted Critical
Publication of AU499874B2 publication Critical patent/AU499874B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00Direct voltage accelerators; Accelerators using single pulses
    • H05H5/04Direct voltage accelerators; Accelerators using single pulses energised by electrostatic generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/12Cells using conversion of the radiation into light combined with subsequent photoelectric conversion into electric energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
  • Photovoltaic Devices (AREA)
AU86915/75A 1974-12-16 1975-11-25 Ferroelelctric ceramic photovoltaic memory Expired AU499874B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
USUS533365 1974-12-16
US05/533,365 US4051465A (en) 1973-11-01 1974-12-16 Ferroelectric ceramic devices

Publications (2)

Publication Number Publication Date
AU8691575A AU8691575A (en) 1977-06-02
AU499874B2 true AU499874B2 (en) 1979-05-03

Family

ID=24125647

Family Applications (1)

Application Number Title Priority Date Filing Date
AU86915/75A Expired AU499874B2 (en) 1974-12-16 1975-11-25 Ferroelelctric ceramic photovoltaic memory

Country Status (12)

Country Link
US (4) US4160927A (US20080094685A1-20080424-C00004.png)
JP (1) JPS599114B2 (US20080094685A1-20080424-C00004.png)
AU (1) AU499874B2 (US20080094685A1-20080424-C00004.png)
BE (1) BE836659A (US20080094685A1-20080424-C00004.png)
CA (1) CA1054244A (US20080094685A1-20080424-C00004.png)
CH (1) CH604321A5 (US20080094685A1-20080424-C00004.png)
DE (1) DE2555816A1 (US20080094685A1-20080424-C00004.png)
FR (1) FR2307336A1 (US20080094685A1-20080424-C00004.png)
GB (1) GB1544086A (US20080094685A1-20080424-C00004.png)
IL (1) IL48659A (US20080094685A1-20080424-C00004.png)
IT (1) IT1049819B (US20080094685A1-20080424-C00004.png)
ZA (1) ZA757388B (US20080094685A1-20080424-C00004.png)

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US4144591A (en) * 1977-08-15 1979-03-13 The United States Of America As Represented By The Secretary Of The Army Memory transistor
WO1979000096A1 (en) * 1977-08-15 1979-03-08 Photovoltaic Ceramic Corp Optical memory with storage in three dimensions
US4247914A (en) * 1979-06-12 1981-01-27 The United States Of America As Represented By The Secretary Of The Army Optical memory with fiber optic light guide
US4250567A (en) * 1979-06-20 1981-02-10 The United States Of America As Represented By The Secretary Of The Army Photovoltaic-ferroelectric beam accessed memory
JPS5755591A (en) * 1980-09-19 1982-04-02 Hitachi Ltd Information recording method
JPS57117186A (en) * 1981-01-12 1982-07-21 Tdk Corp Ferrodielectric memory and its driving method
US4533215A (en) * 1982-12-02 1985-08-06 The United States Of America As Represented By The Secretary Of The Navy Real-time ultra-high resolution image projection display using laser-addressed liquid crystal light valve
US4566086A (en) * 1983-06-13 1986-01-21 Ncr Corporation Information storage system utilizing electrets
DE3434388A1 (de) * 1984-09-19 1986-06-26 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur erzeugung der ersten ableitung eines zweidimensionalen bildes und optisches bauelement zur durchfuehrung des verfahrens
DE3447208A1 (de) * 1984-12-22 1986-06-26 Bayer Ag, 5090 Leverkusen Verfahren zum auslesen von informationen aus elektrisch polarisierbaren datentraegern mittels elektronenstrahlen
JPH0766575B2 (ja) * 1986-02-17 1995-07-19 株式会社日立製作所 電子ビームによる情報再生装置
JPS63245567A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 画像処理装置
US5910393A (en) * 1987-06-10 1999-06-08 Mitsubishi Denki Kabushiki Kaisha Optical recording material
JPS6435277U (US20080094685A1-20080424-C00004.png) * 1987-08-27 1989-03-03
US4965784A (en) * 1988-05-31 1990-10-23 Sandia Corporation Method and apparatus for bistable optical information storage for erasable optical disks
JPH01176283U (US20080094685A1-20080424-C00004.png) * 1988-06-01 1989-12-15
US4931019A (en) * 1988-09-01 1990-06-05 Pennwalt Corporation Electrostatic image display apparatus
US5003528A (en) * 1988-09-09 1991-03-26 The United States Of America As Represented By The Secretary Of The Air Force Photorefractive, erasable, compact laser disk
US5267179A (en) * 1989-08-30 1993-11-30 The United States Of America As Represented By The United States Department Of Energy Ferroelectric optical image comparator
US5376955A (en) * 1989-11-29 1994-12-27 Dai Nippon Printing Co., Ltd. Electrostatic charge information reproducing method with charge transfer by electrostatic discharge
US5206829A (en) * 1990-10-24 1993-04-27 Sarita Thakoor Thin film ferroelectric electro-optic memory
SE501106C2 (sv) * 1992-02-18 1994-11-14 Peter Toth Optiskt minne
JPH05282717A (ja) * 1992-03-31 1993-10-29 Canon Inc 記録媒体の製造方法、及び記録媒体、及び情報処理装置
JP2890011B2 (ja) * 1992-08-19 1999-05-10 富士写真フイルム株式会社 情報記録方法
US5375085A (en) * 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
US5621559A (en) * 1994-04-18 1997-04-15 California Institute Of Technology Ferroelectric optical computing device with low optical power non-destructive read-out
FR2757992B1 (fr) * 1996-12-26 1999-01-29 Commissariat Energie Atomique Support d'enregistrement d'informations, dispositif de lecture de ce support et procedes de mise en oeuvre de ce dispositif
US6515957B1 (en) * 1999-10-06 2003-02-04 International Business Machines Corporation Ferroelectric drive for data storage
JP2003263804A (ja) * 2002-03-08 2003-09-19 Pioneer Electronic Corp 誘電体記録媒体とその製造方法及びその製造装置
US7397624B2 (en) 2003-11-06 2008-07-08 Seagate Technology Llc Transducers for ferroelectric storage medium
US20050237906A1 (en) * 2004-04-27 2005-10-27 Gibson Gary A High density data storage
US20060083048A1 (en) * 2004-06-18 2006-04-20 Naumov Ivan I Multi-stable vortex states in ferroelectric nanostructure
US7593250B2 (en) * 2004-06-18 2009-09-22 Board Of Trustees Of The University Of Arkansas Ferroelectric nanostructure having switchable multi-stable vortex states
US7626842B2 (en) * 2006-11-16 2009-12-01 Freescale Semiconductor, Inc. Photon-based memory device and method thereof
WO2010131241A2 (en) 2009-05-13 2010-11-18 Yevgeni Preezant Improved photo-voltaic cell structure
US20130037092A1 (en) * 2010-02-12 2013-02-14 Rutgers, The State University Of New Jersey Ferroelectric diode and photovoltaic devices and methods
US20120038778A1 (en) * 2010-08-11 2012-02-16 United States Of America, As Represented By The Secretary Of The Army Self-Scanning Passive Infrared Personnel Detection Sensor

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Publication number Priority date Publication date Assignee Title
US2691738A (en) * 1949-04-08 1954-10-12 Bell Telephone Labor Inc Electrical device embodying ferroelectric lanthanum-containing substances
US2663802A (en) * 1951-12-11 1953-12-22 Philip E Ohmart Neutron detector
US2876368A (en) * 1953-04-06 1959-03-03 Tracerlab Inc Nuclear electret battery
US2775650A (en) * 1954-12-31 1956-12-25 Bell Telephone Labor Inc Ferroelectric recording and reproduction of speech
US2926336A (en) * 1955-04-14 1960-02-23 Bell Telephone Labor Inc Ferroelectric device
US2985757A (en) * 1956-10-05 1961-05-23 Columbia Broadcasting Syst Inc Photosensitive capacitor device and method of producing the same
NL295918A (US20080094685A1-20080424-C00004.png) * 1962-07-31
US3508213A (en) * 1967-06-14 1970-04-21 Honeywell Inc Ferroelectric memory apparatus using the transcharger principle of operation
US3497698A (en) * 1968-01-12 1970-02-24 Massachusetts Inst Technology Metal insulator semiconductor radiation detector
US3521244A (en) * 1968-10-23 1970-07-21 Rca Corp Electrical circuit for processing periodic signal pulses
US3609002A (en) * 1969-12-30 1971-09-28 Bell Telephone Labor Inc Multiple element optical memory structures using fine grain ferroelectric ceramics
US3623030A (en) * 1970-05-22 1971-11-23 Nasa Semiconductor-ferroelectric memory device
US3693171A (en) * 1970-12-30 1972-09-19 Itt Ferroelectric-photoelectric storage unit
US3681765A (en) * 1971-03-01 1972-08-01 Ibm Ferroelectric/photoconductor memory element
FR2146903B1 (US20080094685A1-20080424-C00004.png) * 1971-07-23 1978-06-02 Anvar
FR2153140B1 (US20080094685A1-20080424-C00004.png) * 1971-09-20 1974-05-31 Thomson Csf
US3702724A (en) * 1971-10-13 1972-11-14 Atomic Energy Commission Ferroelectric ceramic plate electrooptical light scattering device and method
US3740734A (en) * 1972-03-15 1973-06-19 Bell Telephone Labor Inc Coarse grain polycrystalline ferroelectric ceramic optical memory system
FR2241846B1 (US20080094685A1-20080424-C00004.png) * 1973-08-21 1977-09-09 Thomson Csf
US3855004A (en) * 1973-11-01 1974-12-17 Us Army Method of producing current with ceramic ferroelectric device
JPS50115830A (US20080094685A1-20080424-C00004.png) * 1974-02-22 1975-09-10

Also Published As

Publication number Publication date
CA1054244A (en) 1979-05-08
ZA757388B (en) 1977-07-27
US4139908A (en) 1979-02-13
US4101975A (en) 1978-07-18
JPS51105239A (US20080094685A1-20080424-C00004.png) 1976-09-17
CH604321A5 (US20080094685A1-20080424-C00004.png) 1978-09-15
US4103341A (en) 1978-07-25
US4160927A (en) 1979-07-10
GB1544086A (en) 1979-04-11
AU8691575A (en) 1977-06-02
BE836659A (fr) 1976-06-15
IT1049819B (it) 1981-02-10
DE2555816A1 (de) 1976-06-24
FR2307336B1 (US20080094685A1-20080424-C00004.png) 1982-07-30
FR2307336A1 (fr) 1976-11-05
IL48659A0 (en) 1976-02-29
JPS599114B2 (ja) 1984-02-29
IL48659A (en) 1978-09-29

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