AU4942993A - Current limiting device - Google Patents

Current limiting device

Info

Publication number
AU4942993A
AU4942993A AU49429/93A AU4942993A AU4942993A AU 4942993 A AU4942993 A AU 4942993A AU 49429/93 A AU49429/93 A AU 49429/93A AU 4942993 A AU4942993 A AU 4942993A AU 4942993 A AU4942993 A AU 4942993A
Authority
AU
Australia
Prior art keywords
current limiting
limiting device
current
limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU49429/93A
Inventor
Reinhard Maier
Heinz Mitlehner
Hermann Zierhut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of AU4942993A publication Critical patent/AU4942993A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02—Details
    • H02H3/025—Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors
AU49429/93A 1993-09-08 1993-09-08 Current limiting device Abandoned AU4942993A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE1993/000823 WO1995007548A1 (en) 1993-09-08 1993-09-08 Current limiting device

Publications (1)

Publication Number Publication Date
AU4942993A true AU4942993A (en) 1995-03-27

Family

ID=6888428

Family Applications (1)

Application Number Title Priority Date Filing Date
AU49429/93A Abandoned AU4942993A (en) 1993-09-08 1993-09-08 Current limiting device

Country Status (3)

Country Link
EP (1) EP0717880A1 (en)
AU (1) AU4942993A (en)
WO (1) WO1995007548A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2742933B1 (en) 1995-12-20 1998-03-13 Sgs Thomson Microelectronics STATIC AND MONOLITHIC COMPONENT CURRENT LIMITER AND CIRCUIT BREAKER
DE19548443A1 (en) * 1995-12-22 1997-06-26 Siemens Ag Current limiting semiconductor device
DE19717614A1 (en) 1997-04-25 1998-10-29 Siemens Ag Passive semiconductor current limiter
DE19726678A1 (en) 1997-06-24 1999-01-07 Siemens Ag Passive semiconductor current limiter
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch
US6252258B1 (en) * 1999-08-10 2001-06-26 Rockwell Science Center Llc High power rectifier
DE10029418A1 (en) 2000-06-15 2001-12-20 Siemens Ag Excess current protection circuit has current limiter connected in series with switch element with steep current-voltage characteristic for low voltages and flat characteristic for high voltages
FR2815173B1 (en) * 2000-10-11 2003-08-22 Ferraz Shawmut CURRENT LIMITING COMPONENT, CURRENT LIMITING DEVICE HAVING APPLICATION, AND METHOD FOR MANUFACTURING THE CURRENT LIMITING COMPONENT
DE10214176B4 (en) * 2002-03-28 2010-09-02 Infineon Technologies Ag Semiconductor device with a buried stop zone and method for producing a stop zone in a semiconductor device
DE10243758A1 (en) 2002-09-20 2004-04-01 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Method for producing a buried stop zone in a semiconductor component and semiconductor component with a buried stop zone
DE102006034589B4 (en) * 2006-07-26 2008-06-05 Siemens Ag Current limiting semiconductor device
JP6178181B2 (en) * 2013-09-12 2017-08-09 株式会社東芝 Semiconductor device and manufacturing method thereof
GB202115513D0 (en) 2021-10-28 2021-12-15 Rolls Royce Plc Electrical power system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526076B1 (en) * 1971-04-28 1977-02-18
US4187513A (en) * 1977-11-30 1980-02-05 Eaton Corporation Solid state current limiter

Also Published As

Publication number Publication date
EP0717880A1 (en) 1996-06-26
WO1995007548A1 (en) 1995-03-16

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