AU4878790A - Substrates provided with a structured surface for growing solidifying layers from melts, in particular of semi-conductor material - Google Patents

Substrates provided with a structured surface for growing solidifying layers from melts, in particular of semi-conductor material

Info

Publication number
AU4878790A
AU4878790A AU48787/90A AU4878790A AU4878790A AU 4878790 A AU4878790 A AU 4878790A AU 48787/90 A AU48787/90 A AU 48787/90A AU 4878790 A AU4878790 A AU 4878790A AU 4878790 A AU4878790 A AU 4878790A
Authority
AU
Australia
Prior art keywords
melts
growing
semi
conductor material
structured surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU48787/90A
Inventor
Georg Ambros
Andreas Beck
Joachim Geissler
Dieter Helmreich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HELIOTRONIC FORSCHUNGS- und ENTWICKLUNGSGESELLSCHAFT fur SOLARZELLEN-GRUNDSTOFFE MBH
Original Assignee
Heliotronic Forschungs und Entw fur Solarzellen Grundstoffe Mbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliotronic Forschungs und Entw fur Solarzellen Grundstoffe Mbh filed Critical Heliotronic Forschungs und Entw fur Solarzellen Grundstoffe Mbh
Publication of AU4878790A publication Critical patent/AU4878790A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AU48787/90A 1989-01-27 1990-01-29 Substrates provided with a structured surface for growing solidifying layers from melts, in particular of semi-conductor material Abandoned AU4878790A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3902452A DE3902452A1 (en) 1989-01-27 1989-01-27 SUBSTRATE WITH A STRUCTURED SURFACE FOR THE GROWING-ON OF MATERIAL LAYERS FROM MELT, IN PARTICULAR OF SEMICONDUCTOR MATERIAL
DE3902452 1989-01-27

Publications (1)

Publication Number Publication Date
AU4878790A true AU4878790A (en) 1990-08-02

Family

ID=6372939

Family Applications (1)

Application Number Title Priority Date Filing Date
AU48787/90A Abandoned AU4878790A (en) 1989-01-27 1990-01-29 Substrates provided with a structured surface for growing solidifying layers from melts, in particular of semi-conductor material

Country Status (6)

Country Link
EP (1) EP0381051A1 (en)
JP (1) JPH02291117A (en)
AU (1) AU4878790A (en)
CA (1) CA2005601A1 (en)
DE (1) DE3902452A1 (en)
ZA (1) ZA899185B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4102484A1 (en) * 1991-01-29 1992-07-30 Bayer Ag METHOD FOR THE PRODUCTION OF METAL DISC AND THE USE OF SILICONE DISC
JP3242452B2 (en) * 1992-06-19 2001-12-25 三菱電機株式会社 Manufacturing method of thin film solar cell
JP4111669B2 (en) * 1999-11-30 2008-07-02 シャープ株式会社 Sheet manufacturing method, sheet and solar cell
JP4121697B2 (en) * 1999-12-27 2008-07-23 シャープ株式会社 Crystal sheet manufacturing method and manufacturing apparatus thereof
JP4073941B2 (en) 2006-06-16 2008-04-09 シャープ株式会社 Substrate for solid phase sheet growth and method for producing solid phase sheet
FR2935838B1 (en) * 2008-09-05 2012-11-23 Commissariat Energie Atomique PROCESS FOR PREPARING A SELF-SUPPORTED CRYSTALLIZED SILICON THIN LAYER

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
CH633206A5 (en) * 1978-11-03 1982-11-30 Alusuisse CHOCOLATE WITH Roughened Surface For Casting Metals.
DE3132776A1 (en) * 1981-08-19 1983-03-03 Heliotronic Gmbh METHOD FOR PRODUCING COARSE TO SINGLE CRYSTAL FILMS FROM SEMICONDUCTOR MATERIAL
US4374163A (en) * 1981-09-29 1983-02-15 Westinghouse Electric Corp. Method of vapor deposition
JPS5993000A (en) * 1982-11-17 1984-05-29 Yoshihiro Hamakawa Substrate for manufacturing single crystal thin film
DE3419137A1 (en) * 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR FILMS
FR2630459B1 (en) * 1988-04-20 1994-04-29 Commissariat Energie Atomique PROCESS AND CRUCIBLE FOR SOLIDIFYING MATERIALS, AND APPLICATION TO THE CRYSTALLOGENESIS OF SEMICONDUCTORS

Also Published As

Publication number Publication date
CA2005601A1 (en) 1990-07-27
JPH02291117A (en) 1990-11-30
EP0381051A1 (en) 1990-08-08
ZA899185B (en) 1990-09-26
DE3902452A1 (en) 1990-08-02

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