Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
  • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
  • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
  • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
  • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
  • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
  • H01J29/36—Photoelectric screens; Charge-storage screens
  • H01J29/39—Charge-storage screens
  • H01J29/44—Charge-storage screens exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J31/00—Cathode ray tubes; Electron beam tubes
  • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
  • H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
  • H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B99/00—Subject matter not provided for in other groups of this subclass
  • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Semiconductor Memories (AREA)
• Design And Manufacture Of Integrated Circuits (AREA)
• Non-Volatile Memory (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=22030356

Family Applications (1)

Country Status (15)

Families Citing this family (14)

• 1970
  • 1970-08-03 US US00060572A patent/US3721962A/en not_active Expired - Lifetime
• 1971
  • 1971-05-19 CA CA113,437A patent/CA950116A/en not_active Expired
  • 1971-07-14 GB GB3304571A patent/GB1323631A/en not_active Expired
  • 1971-07-19 ZA ZA714756A patent/ZA714756B/xx unknown
  • 1971-07-22 AU AU31519/71A patent/AU441498B2/en not_active Expired
  • 1971-07-29 ES ES393737A patent/ES393737A1/es not_active Expired
  • 1971-08-02 BR BR004911/71A patent/BR7104911D0/pt unknown
  • 1971-08-02 FR FR7128197A patent/FR2101189B1/fr not_active Expired
  • 1971-08-02 DK DK377871AA patent/DK136388B/da unknown
  • 1971-08-02 BE BE770816A patent/BE770816A/xx unknown
  • 1971-08-02 AT AT671771A patent/AT316898B/de not_active IP Right Cessation
  • 1971-08-02 SE SE7109890A patent/SE371319B/xx unknown
  • 1971-08-03 JP JP46058598A patent/JPS5131067B1/ja active Pending
  • 1971-08-03 NL NL7110702A patent/NL7110702A/xx not_active Application Discontinuation
  • 1971-08-03 CH CH1143871A patent/CH539914A/de not_active IP Right Cessation

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